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參數(shù)資料
型號： F49L160BA-70T
廠商： ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類： DRAM
英文描述： 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
中文描述： 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝： 12 X 20 MM, TSOP1-48
文件頁數(shù)： 11/51頁
文件大小： 454K
代理商： F49L160BA-70T
ES MT
F49L160UA/F49L160BA
Elite Semiconductor Memory Technology Inc.
Publication Date : Dec. 2006
Revision: 1.3 11/51
Table 5. F49L160UA/F49L160BA Software Command Definitions
1st Bus
Cycle
2nd Bus
Cycle
3rd Bus
Cycle
4th Bus
Cycle
5th Bus
Cycle
6th Bus
Cycle
Command
Bus
Cycles
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Reset (5)
1
XXXH F0H
-
-
-
-
-
-
-
-
-
-
Read (4)
1
RA
RD
-
-
-
-
-
-
-
-
-
-
Word
4
555H AAH 2AAH
55H
555H
A0H
PA
PD
Program
Byte
4
AAAH AAH 555H
55H
AAAH
A0H
PA
PD
Word
6
555H AAH 2AAH
55H
555H
80H
555H
AAH
2AAH 55H
555H
10H
Chip Erase
Byte
6
AAAH AAH 555H
55H
AAAH
80H
AAAH
AAH
555H
55H AAAH
10H
Word
6
555H AAH 2AAH
55H
555H
80H
555H
AAH
2AAH 55H
SA
30H
Sector Erase
Byte
6
AAAH AAH 555H
55H
AAAH
80H
AAAH
AAH
555H
55H
SA
30H
Sector Erase
Suspend (6)
1
XXXH B0H
-
-
-
-
-
-
-
-
-
-
Sector Erase Resume
(7)
1
XXXH 30H
-
-
-
-
-
-
-
-
-
-
Auto-select
See Table 6.
Notes:
1. X = don’t care
RA = Address of memory location to be read.
RD = Data to be read at location RA.
PA = Address of memory location to be programmed.
PD = Data to be programmed at location PA.
SA = Address of the sector.
2. Except Read command and Auto-select command, all command bus cycles are write operations.
3. The system should generate the following address patterns: 555H or 2AAH to address A10~A0 in word mode
/ AAAH or 555H to address A10~A-1 in byte mode.
4. Address bits A19–A11 are don’t cares.
5. No command cycles required when reading array data.
6. The Reset command is required to return to reading array data when device is in the auto-select mode, or if
DQ5 goes high(while the device is providing status data).
7. The system may read and program in non-erasing sectors, or enter the auto-select mode, when in the Erase
Suspend mode. The Erase Suspend command is valid only during a sector erase operation.
8. The Erase Resume command is valid only during the Erase Suspend mode.
相關(guān)PDF資料
PDF描述
F49L160BA-90T 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160UA 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160UA-70T 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160UA-90T 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L400BA 4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
F49L160BA-70TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160BA-90T 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160BA-90TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160BA-90TIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160UA 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
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