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參數(shù)資料
型號: F49L400BA-70T
廠商: Elite Semiconductor Memory Technology Inc.
英文描述: 4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory
中文描述: 4兆位(為512k × 8/256K × 16)3V時僅閃存的CMOS
文件頁數(shù): 21/47頁
文件大小: 397K
代理商: F49L400BA-70T
EFS T
10.1 Read Operation
F49L400UA/F49L400BA
Elite Flash Storage Technology Inc.
Publication Date : Sep. 2006
Revision: 1.1 21/47
TA = 0C to 70C, V
CC
= 3.0V~3.6V
Table 10. Read Operations
-70
-90
Symbol
Description
Conditions
Min.
70
Max.
Min.
90
Max.
Unit
t
RC
Read Cycle Time (Note 1)
ns
t
ACC
Address to Output Delay
CE
=
OE
= V
IL
70
90
ns
t
CE
CE
to Output Delay
OE
= V
IL
70
90
ns
t
OE
OE
to Output Delay
CE
= V
IL
30
35
ns
t
DF
OE
High to Output Float
(Note1)
CE
= V
IL
25
30
ns
Output Enable
Read
0
0
ns
t
OEH
Hold Time
Toggle and
Data Polling
10
10
ns
t
OH
Address to Output hold
CE
=
OE
= V
IL
0
0
ns
Notes :
1. Not 100% tested.
2. t
DF
is defined as the time at which the output achieves the open circuit condition and data is no longer
driven.
Figure 5. Read Timing Waveform
t
RC
Addresses Stable
Output Valid
Address
High- Z
CE
W E
0V
RY/BY
RESET
OE
Outputs
High- Z
t
AC C
t
O E H
t
O E
t
O H
t
D F
t
CE
相關(guān)PDF資料
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F49L400BA-90T 4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory
F49L400UA 4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory
F49L400UA-70T 4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
F49L400BA-90T 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory
F49L400UA 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory
F49L400UA-70T 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory
F49L400UA-90T 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory
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