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參數(shù)資料
型號(hào): F49L400BA-70T
廠商: Elite Semiconductor Memory Technology Inc.
英文描述: 4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory
中文描述: 4兆位(為512k × 8/256K × 16)3V時(shí)僅閃存的CMOS
文件頁(yè)數(shù): 42/47頁(yè)
文件大小: 397K
代理商: F49L400BA-70T
EFS T
10.4 TEMPORARY SECTOR UNPROTECT Operation
F49L400UA/F49L400BA
Elite Flash Storage Technology Inc.
Publication Date : Sep. 2006
Revision: 1.1 42/47
Table 14. Temporary Sector Unprotect
Symbol
Description
All Speed Options
Unit
T
VIDR
V
ID
Rise and Fall Time (See Note)
Min
500
ns
T
RSP
ESET
Unprotect
R
Setup Time for Temporary Sector
Min
4
us
Notes:
Not 100% tested
Figure 24. Temporary Sector Unprotect Timing Diagram
Figure 25. Q6 vs Q2 for Erase and Erase Suspend Operations
Notes :
The system can use OE or CE to toggle DQ2 / DQ6, DQ2 toggles only when read at an address within an
erase-suspended.
W E
RY/BY
CE
RESET
t
V I D R
t
RS P
0 or V
CC
P r o g r am or E r as e C om m an d S eq u e n c e
t
V I D R
0 or V
CC
12V
W E
DQ6
DQ2
Enter Embedded
Erasing
Erase
Suspend
Enter Erase
Suspend Program
Erase
Suspend
Program
Erase
Suspend
Read
Erase
Resume
Erase
Erase
Complete
相關(guān)PDF資料
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F49L400BA-90T 4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
F49L400BA-90T 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory
F49L400UA 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory
F49L400UA-70T 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory
F49L400UA-90T 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory
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