- 您現在的位置：買賣IC網 > PDF目錄375705 > F49L400BA (Elite Semiconductor Memory Technology Inc.) 4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory PDF資料下載
參數資料
| 型號： | F49L400BA |
| 廠商： | Elite Semiconductor Memory Technology Inc. |
| 英文描述： | 4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory |
| 中文描述： | 4兆位（為512k × 8/256K × 16）3V時僅閃存的CMOS |
| 文件頁數： | 18/47頁 |
| 文件大小： | 397K |
| 代理商： | F49L400BA |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁當前第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁
EFS T
8. ABSOLUTE MAXIMUM RATINGS
F49L400UA/F49L400BA
Elite Flash Storage Technology Inc.
Publication Date : Sep. 2006
Revision: 1.1 18/47
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . –65
°
C to +150
°
C
Ambient Temperature
with Power Applied. . . . . . . .. . . . . . –65
°
C to +125
°
C
Voltage with Respect to Ground
V
CC
(Note 1) . . . . . . . . . . .–0.5 V to +4.0 V
A9
,
OE
,
and
ESET
R
(Note 2) …. . . .. . . . . –0.5 V to +12.5 V
All other pins (Note 1). . . . . . . . . . –0.5 V to V
CC
+0.5 V
Output Short Circuit Current (Note 3) .. . .. 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins
is –0.5 V. During voltage transitions, input or
I/O pins may overshoot V
SS
to
–2.0 V for periods of up to 20 ns. See Figure 1.
Maximum DC voltage on input or I/O pins is
V
CC
+0.5 V. During voltage transitions, input or
I/O pins may overshoot to V
CC
+2.0 V for
periods up to 20 ns. See Figure 2.
2. Minimum DC input voltage on pins A9,
OE
,
and
ESET
R
is -0.5 V. During voltage
transitions, A9,
OE
, and
overshoot V
SS
to –2.0 V for periods of up to 20
ns. See Figure 1. Maximum DC input voltage
on pin A9 is +12.5 V which may overshoot to
14.0 V for periods up to 20 ns.
3. No more than one output may be shorted to
ground at a time. Duration of the short circuit
should not be greater than one second.
ESET
R
may
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
This is
a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device
reliability.
Figure 1. Maximum Negative Overshoot Waveform
Figure 2. Maximum Positive Overshoot Waveform
+0.8V
-0.5V
-2.0V
20ns
20ns
20ns
Vc c
+2.0V
Vc c
+0.5V
2.0V
20ns
20ns
20ns
相關PDF資料 |
PDF描述 |
|---|---|
| F49L400BA-70T | 4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory |
| F49L400BA-90T | 4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory |
| F49L400UA | 4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory |
| F49L400UA-70T | 4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory |
| F49L400UA-90T | 4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| F49L400BA-70T | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory |
| F49L400BA-90T | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory |
| F49L400UA | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory |
| F49L400UA-70T | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory |
發布緊急采購，3分鐘左右您將得到回復。