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參數資料
| 型號： | F49L800BA |
| 廠商： | Elite Semiconductor Memory Technology Inc. |
| 英文描述： | 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
| 中文描述： | 8兆位（100萬x 8/512K × 16）3V時僅閃存的CMOS |
| 文件頁數： | 18/47頁 |
| 文件大小： | 435K |
| 代理商： | F49L800BA |
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ES MT
8. ABSOLUTE MAXIMUM RATINGS
F49L800UA/F49L800BA
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2007
Revision: 1.2 18/47
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . –65
°
C to +150
°
C
Ambient Temperature
with Power Applied. . . . . . . .. . . . . . –65
°
C to +125
°
C
Voltage with Respect to Ground
V
CC
(Note 1) . . . . . . . . . . .–0.5 V to +4.0 V
A9
,
OE
,
and
ESET
R
(Note 2) …. . . .. . . . . –0.5 V to +12.5 V
All other pins (Note 1). . . . . . . . . . –0.5 V to V
CC
+0.5 V
Output Short Circuit Current (Note 3) .. . .. 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins
is –0.5 V. During voltage transitions, input or
I/O pins may overshoot V
SS
to
–2.0 V for periods of up to 20 ns. See Figure 1.
Maximum DC voltage on input or I/O pins is
V
CC
+0.5 V. During voltage transitions, input or
I/O pins may overshoot to V
CC
+2.0 V for
periods up to 20 ns. See Figure 2.
2. Minimum DC input voltage on pins A9,
OE
,
and
ESET
R
is -0.5 V. During voltage
transitions, A9,
OE
, and
overshoot V
SS
to –2.0 V for periods of up to 20
ns. See Figure 1. Maximum DC input voltage
on pin A9 is +12.5 V which may overshoot to
14.0 V for periods up to 20 ns.
3. No more than one output may be shorted to
ground at a time. Duration of the short circuit
should not be greater than one second.
ESET
R
may
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
This is
a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device
reliability.
Figure 1. Maximum Negative Overshoot Waveform
Figure 2. Maximum Positive Overshoot Waveform
+0.8V
-0.5V
-2.0V
20ns
20ns
20ns
Vc c
+2.0V
Vc c
+0.5V
2.0V
20ns
20ns
20ns
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| F49L800BA-70T | 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
| F49L800BA-90T | 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
| F49L800UA | 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
| F49L800UA-70T | 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
| F49L800UA-90T | 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| F49L800BA-70T | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
| F49L800BA-70TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
| F49L800BA-70TIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
| F49L800BA-90T | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
| F49L800BA-90TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
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