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參數資料
| 型號： | F49L800UA |
| 廠商： | Elite Semiconductor Memory Technology Inc. |
| 英文描述： | 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
| 中文描述： | 8兆位（100萬x 8/512K × 16）3V時僅閃存的CMOS |
| 文件頁數： | 1/47頁 |
| 文件大小： | 435K |
| 代理商： | F49L800UA |
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ES MT
F49L800UA/F49L800BA
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2007
Revision: 1.2 1/47
8 Mbit (1M x 8/512K x 16)
3V Only CMOS Flash Memory
1. FEATURES
z
Single supply voltage 2.7V-3.6V
z
Fast access time: 70/90 ns
z
1,048,576x8 / 524,288x16 switchable by
BYTE
pin
z
Compatible with JEDEC standard
- Pin-out, packages and software commands
compatible with single-power supply Flash
z
Low power consumption
- 7mA typical active current
- 25uA typical standby current
z
100,000 program/erase cycles typically
z
20 years data retention
z
Command register architecture
- Byte programming (9us typical)
- Sector Erase(sector structure: one 16 KB, two 8 KB,
one 32 KB, and fifteen 64 KB)
z
Auto Erase (chip & sector) and Auto Program
- Any combination of sectors can be erased
concurrently; Chip erase also provided.
- Automatically program and verify data at specified
address
z
Erase Suspend/Erase Resume
- Suspend or Resume erasing sectors to allow the
read/program in another sector
z
Ready/Busy (RY/
BY
)
- RY/
BY
output pin for detection of program or erase
operation completion
z
End of program or erase detection
- Data polling
- Toggle bits
z
Hardware reset
- Hardware pin(
ESET
R
) resets the internal state machine
to the read mode
z
Sector Protection /Unprotection
- Hardware Protect/Unprotect any combination of sectors
from a program or erase operation.
z
Low V
CC
Write inhibit is equal to or less than 2.0V
z
Boot Sector Architecture
- U = Upper Boot Block
- B = Bottom Boot Block
z
Packages available:
- 48-pin TSOPI
2. ORDERING INFORMATION
Part No
Boot
Speed
Package
Part No
Boot
Speed
Package
F49L800UA-70T
F49L800BA-70T
Upper
Bottom
70 ns
70 ns
TSOPI
TSOPI
F49L800UA-90T
F49L800BA-90T
Upper
Bottom
90 ns
90 ns
TSOPI
TSOPI
3. GENERAL DESCRIPTION
The F49L800UA/F49L800BA is a 8 Megabit, 3V only
CMOS Flash memory device organized as 1M bytes of 8
bits or 512K words of 16bits. This device is packaged in
standard 48-pin TSOP. It is designed to be programmed
and erased both in system and can in standard EPROM
programmers.
With access times of 70 ns and 90 ns, the
F49L800UA/F49L800BA
allows
high-speed microprocessors. The device has separate
chip enable
CE
, write enable
WE
, and output enable
OE
controls. ESMT's memory devices reliably store memory
data even after 100,000 program and erase cycles.
The F49L800UA/F49L800BA is entirely pin and
command set compatible with the JEDEC standard for 8
Megabit Flash memory devices. Commands are written to
the command register using standard microprocessor
write timings.
the
operation
of
The F49L800UA/F49L800BA features a sector erase
architecture. The device memory array is divided into one
16 Kbytes, two 8 Kbytes, one 32 Kbytes, and fifteen 64
Kbytes. Sectors can be erased individually or in groups
without affecting the data in other sectors. Multiple-sector
erase and whole chip erase capabilities provide the
flexibility to revise the data in the device.
The sector protect/unprotect
feature disables both
program and erase operations in any combination of the
sectors of the memory. This can be achieved in-system or
via programming equipment.
A low V
CC
detector inhibits write operations on loss of
power. End of program or erase is detected by the
Ready/Busy status pin, Data Polling of DQ7, or by the
Toggle Bit I feature on DQ6. Once the program or erase
cycle has been successfully completed, the device
internally resets to the Read mode.
相關PDF資料 |
PDF描述 |
|---|---|
| F49L800UA-70T | 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
| F49L800UA-90T | 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
| F50-A24-3002A90 | RF Coaxial Connectors |
| F5001H | INTELIGENT POWER SWITCH |
| F5001 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| F49L800UA_08 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
| F49L800UA_1 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
| F49L800UA-70T | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
| F49L800UA-70TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
| F49L800UA-70TIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory |
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