欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: F49L800UA
廠商: Elite Semiconductor Memory Technology Inc.
英文描述: 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
中文描述: 8兆位(100萬x 8/512K × 16)3V時僅閃存的CMOS
文件頁數: 17/47頁
文件大小: 435K
代理商: F49L800UA
ES MT
7.4 More Device Operations
Hardware Data Protection
F49L800UA/F49L800BA
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2007
Revision: 1.2 17/47
The command sequence requirement of unlock cycles for
programming or erasing provides data protection against
inadvertent writes. In addition, the following hardware
data protection measures prevent accidental erasure or
programming, which might otherwise be caused by
spurious system level signals during V
CC
power-up and
power-down transitions, or from system noise.
Low V
CC
Write Inhibit
When V
CC
is less than VLKO, the device does not accept
any write cycles. This protects data during V
CC
power-up
and power-down. The command register and all internal
program/erase circuits are disabled, and the device
resets. Subsequent writes are ignored until V
CC
is
greater than V
LKO
. The system must provide the proper
signals to the control pins to prevent unintentional writes
when V
CC
is greater than V
LKO
.
Write Pulse "Glitch" Protection
Noise pulses of less than 5 ns (typical) on
CE
or
WE
do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of
OE
=
V
IL
,
CE
= V
IH
or
WE
= V
IH
. To initiate a write cycle,
CE
and
WE
must be a logical zero while
OE
is a
logical one.
Power Supply Decoupling
In order to reduce power switching effect, each device
should have a 0.1uF ceramic capacitor connected
between
its V
CC
and GND.
Power-Up Sequence
The device powers up in the Read Mode. In addition, the
memory contents may only be altered after successful
completion of the predefined command sequences.
Power-Up Write Inhibit
If
WE
=
CE
= V
IL
and
OE
= V
IH
during power up, the
device does not accept commands on the rising edge of
WE
. The internal state machine is automatically reset to
reading array data on power-up.
相關PDF資料
PDF描述
F49L800UA-70T 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
F49L800UA-90T 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
F50-A24-3002A90 RF Coaxial Connectors
F5001H INTELIGENT POWER SWITCH
F5001 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
相關代理商/技術參數
參數描述
F49L800UA_08 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
F49L800UA_1 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
F49L800UA-70T 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
F49L800UA-70TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
F49L800UA-70TIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
主站蜘蛛池模板: 班戈县| 滦南县| 荆州市| 荣昌县| 卓尼县| 苏尼特右旗| 东源县| 怀仁县| 蓝山县| 射洪县| 顺昌县| 榆社县| 浠水县| 游戏| 泊头市| 嘉兴市| 东宁县| 民和| 鞍山市| 金山区| 定西市| 嘉善县| 牟定县| 化州市| 广昌县| 岗巴县| 阿克苏市| 来宾市| 黄山市| 平果县| 容城县| 无锡市| 工布江达县| 晴隆县| 离岛区| 炉霍县| 庐江县| 延川县| 洛川县| 奉新县| 江达县|