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參數資料
| 型號： | FA01215 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | GaAs FET HYBRID IC |
| 中文描述： | 砷化鎵場效應管混合集成電路 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 15K |
| 代理商： | FA01215 |
FA01215
MITSUBISHI SEMICONDUCTOR GaAs FET
GaAs FET HYBRID IC
Nov. ′97
DESCRIPTION
FA01215 is RF Hybrid IC designed for 900MHz band
small size handheld radio.
FEATURES
Low voltage
High gain
High efficiency
High power
3.0V
24dB(typ.)
50%
34.5dBm
APPLICATION
GSM IV
Unit:mm
0.5±0.15
6
14.7
14.2
2
3.5
3.5
2
2
0.6
2.5
2.5
2.5
2.5 1.95
2.25
0.25±0.1
2
3
1
4
5
RF INPUT
V
G1,2
V
D1
V
D2
RF OUTPUT
GND(FIN)
3
4
5
6
2
1
Typ
–
Max
915
–
Min
890
34.5
50
-3
–
–
–
Limits
Parameter
Test conditions
ABSOLUTE MAXIMUM RATINGS
Symbol
V
D
P
in
T
C
(op)
T
stg
Storage temperature.
Note: Each maximum ratings is guaranteed independently and P.W.=580μs,duty=1/8 operation.
ELECTRICAL CHARACTERISTICS
(T
a
=25C)
Symbol
Unit
f
P
O
ht
Igt
rin
2fo,3fo
OSC.T
VSWR.T
Total efficiency
Total gate current
Return loss
2nd harmonics, 3rd harmonics
Stability
Load VSWR tolerance
Note1: Pin=13dBm,V
D
1=V
D
2=3.0V(Pulse: P.W.=580μs,duty=1/8),V
G
1,2=-2.0V,Z
G
=Z
L
=50
Note2: P
O
=34.5dBm(Pin controlled),V
D
1=V
D
2=3.0V(Pulse: P.W.=580μs,duty=1/8),V
G
1,2=-2.0V,Z
G
=Z
L
=50
Note3: P
O
=34.5dBm(Pin controlled),V
D
1=V
D
2=3.0V(DC),V
G
1,2=-2.0V,Z
G
=Z
L
=50
Note4: P
O
=0~34.5dBm(Pin controlled),V
D
1=V
D
2=3.0V(DC),V
G
1,2=-2.0V,
ρ
L=3:1(all phase),Z
G
=50
Note5: P
O
=34.5dBm(Pin controlled),V
D
1=V
D
2=4.5V(Pulse:P.W.=580μs,duty=1/8),V
G
1,2=-2.0V,
ρ
L=6:1(all phase),Z
G
=50
0
-6
-30
-60
–
MHz
dBm
%
mA
dB
dBc
dBc
–
Note1
–
–
–
–
–
–
Parameter
Ratings
4.5
15
-20 to +85
-30 to +90
Unit
V
dBm
C
C
Drain voltage
Input power
Operation case temperature.
Frequency
Output power
Ta
25C
25C
–
–
Condition
P
O
≤
34.5dBm
Z
G
=Z
L
=50
No degradation or destroy
Note2
Note3
Note4
Note5
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| FA01220A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:GaAs FET HYBRID IC |
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