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參數資料
| 型號： | FA38SA50LC |
| 廠商： | International Rectifier |
| 英文描述： | RECTIFIER BRIDGE 25A 200V 350A-ifsm 1.05V-vf 10uA-ir GBJ 15/TUBE |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數： | 2/8頁 |
| 文件大?。?/td> | 171K |
| 代理商： | FA38SA50LC |
FA38SA50LC
2
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
38A, di/dt
≤
410A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Notes:
Starting T
J
= 25°C, L = 0.80mH
R
G
= 25
, I
AS
= 38A. (See Figure 12)
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 38A, V
GS
= 0V
T
J
= 25°C, I
F
= 38A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
830
15
1.3
1300
22
V
ns
μC
Source-Drain Ratings and Characteristics
A
38
150
Parameter
Min. Typ. Max. Units
500
–––
–––
0.66
–––
–––
2.0
–––
22
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
280
–––
37
–––
150
–––
42
–––
340
–––
200
–––
330
–––
5.0
Conditions
V
GS
= 0V, I
D
= 1.0mA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 23A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 23A
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 38A
V
DS
= 400V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 250V
I
D
= 38A
R
G
= 10
(Internal)
R
D
= 8
,
See Fig. 10
Between lead,
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
–––
0.13
4.0
–––
50
500
200
-200
420
55
220
–––
–––
–––
–––
–––
V
V/°C
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
s
nC
nH
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
6900
1600
580
–––
–––
–––
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
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