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參數資料
| 型號： | FCX1147A |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP SILICON POWER (SWITCHING) TRANSISTOR |
| 中文描述： | 3000 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-89, 3 PIN |
| 文件頁數： | 2/3頁 |
| 文件大小： | 74K |
| 代理商： | FCX1147A |
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
VALUE
PARAMETER
SYMBOL
UNIT
CONDITIONS.
MIN.
TYP.
MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-15
V
I
C
=-100
μ
A
Collector-Emitter
Breakdown Voltage
V
(BR)CES
-12
V
I
C
=-100
μ
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-12
V
I
C
=-10mA
Collector-Emitter
Breakdown Voltage
V
(BR)CEV
-12
V
I
C
=-100
μ
A, V
EB
=+1V
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
μ
A
Collector Cut-Off Current
I
CBO
-0.3
-10
nA
V
CB
=-12V
Emitter Cut-Off Current
I
EBO
-0.3
-10
nA
V
EB
=-4V
Collector Emitter Cut-Off
Current
I
CES
-0.3
-10
nA
V
CES
=-10V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-25
-70
-90
-115
-160
-250
-50
-110
-130
-170
-250
-400
mV
mV
mV
mV
mV
I
C
=-0.1A, I
B
=-1mA*
I
C
=-0.5A, I
=-2.5mA*
I
C
=-1A, I
B
=-6mA*
I
C
=-2A, I
B
=-20mA*
I
C
=-3A, I
B
=-30mA*
I
C
=-5A, I
B
=-50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-820
-1000
mV
I
C
=-3A, I
B
=-30mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
-770
-950
mV
I
C
=-3A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
270
250
200
200
150
90
450
400
340
300
245
145
50
850
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.5A, V
CE
=-2V*
I
C
=-2.0A, V
CE
=-2V*
I
C
=-3.0A, V
CE
=-2V*
I
C
=-5.0A, V
CE
=-2V*
I
C
=-10.0A, V
CE
=-2V*
I
C
=-20.0A, V
CE
=-2V*
Transition Frequency
f
T
115
MHz
I
=-50mA, V
CE
=-10V
f=50MHz
Output Capacitance
C
cb
80
pF
V
CB
=-10V, f=1MHz
Switching Times
t
on
150
ns
I
C
=-4A, I
B
=-40mA,
V
CC
=-10V
t
off
220
ns
I
C
=-4A, I
B
=
40mA,
V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
FCX1147A
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相關代理商/技術參數 |
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| FCX1147ATA | 功能描述:兩極晶體管 - BJT PNP Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FCX1149 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:PNP SILICON POWER (SWITCHING) TRANSISTOR |
| FCX1149A | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:PNP SILICON POWER (SWITCHING) TRANSISTOR |
| FCX1149ATA | 功能描述:兩極晶體管 - BJT PNP Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FCX1151A | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:PNP SILICON POWER (SWITCHING) TRANSISTOR |
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