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參數資料
| 型號： | FCX458 |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR |
| 中文描述： | 225 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-89, 3 PIN |
| 文件頁數： | 1/1頁 |
| 文件大小： | 18K |
| 代理商： | FCX458 |
SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 – OCTOBER 1995
FEATURES
*
400 Volt V
CEO
*
P
tot
= 1 Watt
COMPLEMENTARY TYPE –
PARTMARKING DETAIL –
FCX558
N58
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
:T
stg
400
V
Collector-Emitter Voltage
400
V
Emitter-Base Voltage
5
V
Continuous Collector Current
225
mA
Peak Pulse Current
500
mA
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
1
W
-65 to +150
°C
SYMBOL
MIN.
MAX .
UNIT
CONDITIONS.
I
C
=100
μ
A
I
C
=10mA*
Breakdown Voltages
V
(BR)CBO
V
CEO(sus)
400
V
400
V
V
(BR)EBO
5
V
I
E
=100
μ
A
Collector Cut-Off Currents
I
CBO
I
CES
100
nA
V
CB
=320V
V
CE
=320V
100
nA
Emitter Cut-Off Current
I
EBO
V
CE(sat)
100
nA
V
EB
=4V
I
C
=20mA, I
B
=2mA*
I
C
=50mA, I
B
=6mA*
I
C
=50mA, I
B
=5mA*
Emitter Saturation Voltages
0.2
0.5
V
V
V
BE(sat)
0.9
V
Base-Emitter
Turn On Voltage
V
BE(on)
0.9
V
I
C
=50mA, V
CE
=10V*
S tatic Forward Current
Transfer Ratio
h
FE
100
100
15
300
I
C
=1mA, V
CE
=10V
I
C
=50mA, V
CE
=10V*
I
C
=100mA, V
CE
=10V**
I
=10mA, V
CE
=20V
f=20MHz
Transition Frequency
f
T
50
MHz
Collector-Base
Breakdown Voltage
C
obo
5
pF
V
CB
=20V, f=1MHz
S witching times
t
on
t
off
135 Typical
2260 Typical
ns
ns
I
C
=50mA, V
C
=100V
I
B1
=5mA, I
B2
=-10mA
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FMMT458 datasheet
FCX458
3 - 85
C
B
C
E
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