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參數資料
| 型號： | FCX558 |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR |
| 中文描述： | 200 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數： | 1/1頁 |
| 文件大小： | 17K |
| 代理商： | FCX558 |
SOT89 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 – MARCH 1996
FEATURES
*
400 Volt V
CEO
*
P
tot
= 1 Watt
COMPLEMENTARY TYPE –
FCX458
PARTMARKING DETAIL –
P58
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
:T
stg
-400
V
Collector-Emitter Voltage
-400
V
Emitter-Base Voltage
-5
V
Continuous Collector Current
-200
mA
Peak Pulse Current
-500
mA
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
1
W
-65 to +150
°C
SYMBOL
V
(BR)CBO
MIN.
-400
MAX.
UNIT
V
CONDITIONS.
I
C
=-100
μ
A
V
(BR)CEO
-400
V
I
C
=-10mA*
V
(BR)EBO
-5
V
I
E
=-100
μ
A
I
CBO
;I
CES
I
EBO
V
CE(sat)
-100
-100
-0.2
-0.5
-0.9
nA
nA
V
V
V
V
CB
=-320V; V
CES
= 320V
V
EB
=-4V
I
C
=-20mA, I
B
=-2mA*
I
C
=-50mA, I
B
=-6mA*
I
C
=-50mA, I
B
=-5mA*
V
BE(sat)
V
BE(on)
-0.9
V
I
C
=-50mA, V
CE
=-10V*
h
FE
100
100
15
50
300
I
C
=-1mA, V
CE
=-10V
I
C
=-50mA, V
CE
=-10V*
I
C
=-100mA, V
CE
=-10V*
I
=-10mA, V
CE
=-20V
f=20MHz
V
CB
=-20V, f=1MHz
Transition Frequency
f
T
MHz
Collector-Base
Breakdown Voltage
Switching times
C
obo
5
pF
t
on
t
off
95 Typical
1600 Typical
ns
ns
I
C
=-50mA, V
C
=-100V
I
B1
=-5mA, I
B2
=-10mA
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FZT558 datasheet.
3 - 90
FCX558
C
C
B
E
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相關代理商/技術參數 |
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| FCX558TA | 功能描述:兩極晶體管 - BJT PNP Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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| FCX589TA | 功能描述:兩極晶體管 - BJT PNP Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FCX591 | 制造商:HTSEMI 制造商全稱:Shenzhen Jin Yu Semiconductor Co., Ltd. 功能描述:TRANSISTOR (PNP) |
| FCX591A | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
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