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參數(shù)資料
| 型號(hào)： | FCX491A |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
| 中文描述： | 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 16K |
| 代理商： | FCX491A |
SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
*
1 Amp continuous current
COMPLEMENTARY TYPE-
PARTMARKING DETAILS -
FCX591A
N2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
TOT
T
j
:T
stg
40
V
Collector-Emitter Voltage
40
V
Emitter-Base Voltage
5
V
Peak Pulse Current
1
A
Continuous Collector Current
2
A
Power Dissipation
1
W
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C ).
PARAMETER
-65 to +150
°C
SYMBOL
MIN.
MAX .
UNIT CONDITIONS.
Breakdown Voltages
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO,
I
CES
I
EBO
V
CE(sat)
40
V
I
C
=100
μ
A
I
C
=10mA*
I
E
=100
μ
A
V
CB
=30V,
V
CE
=30V
V
EB
=4V
I
C
=500mA, I
=50mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, V
CE
=5V*
40
V
5
V
Collector Cut-Off Currents
100
nA
100
nA
Emitter Cut-Off Current
100
nA
Emitter Saturation Voltages
0.3
0.5
V
V
V
BE(sat)
V
BE(on)
1.1
V
Base-Emitter
Turn-On Voltage
1.0
V
Static Forward Current
Transfer
h
FE
300
300
200
35
900
I
C
=1mA, V
=5V
I
C
=500mA, V
=5V*
I
C
=1A, V
CE
=5V*
I
C
=2A, V
CE
=5V*
MHz I
=50mA, V
CE
=10V
f=100MHz
Transitional Frequency
f
T
150
Collector-Base Breakdown
Voltage
C
obo
10
pF
V
CB
=10V f=1MHz
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
For typical Characteristics graphs see FMMT491A datasheet
FCX491A
3 - 87
C
C
B
E
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| FCX491ATA | 功能描述:兩極晶體管 - BJT NPN Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FCX491TA | 功能描述:兩極晶體管 - BJT NPN Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FCX493 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
| FCX493TA | 功能描述:兩極晶體管 - BJT NPN Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FCX493TC | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
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