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參數(shù)資料
| 型號： | FCX605TA |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR |
| 中文描述： | 1000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 107K |
| 代理商： | FCX605TA |
ISSUE 1 - J ULY 2001
FCX605
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
J unction to Ambient (a)
R
θ
J A
125
°C/W
J unction to Ambient (b)
R
θ
J A
45
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT NPN
UNIT
Collector-Base Voltage
V
CBO
140
V
Collector-Emitter Voltage
V
CEO
120
V
Emitter-Base Voltage
V
EBO
10
V
Peak Pulse Current
I
CM
4
A
Continuous Collector Current
I
C
1
A
Power Dissipation at TA=25°C (a)
Linear Derating Factor
P
D
1
8
W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
P
D
2.8
22
W
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FCX605 | 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR |
| FCX617 | NPN SILICON POWER (SWITCHING) TRANSISTOR |
| FCX619 | NPN SILICON POWER (SWITCHING) TRANSISTOR |
| FCX658A | NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FCX617 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR |
| FCX617TA | 功能描述:兩極晶體管 - BJT NPN Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FCX619 | 制造商:Diodes Incorporated 功能描述: |
| FCX619_03 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR |
| FCX619_13 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:50V NPN LOW SATURATION POWER TRANSISTOR IN SOT89 |
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