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參數資料
| 型號： | FCX705 |
| 廠商： | Zetex Semiconductor |
| 英文描述： | 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR |
| 中文描述： | 120伏特高壓NPN硅達林頓晶體管 |
| 文件頁數： | 3/5頁 |
| 文件大小： | 91K |
| 代理商： | FCX705 |
ISSUE 2 - AUGUST 2001
FCX705
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX .
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-140
V
I
C
= -100 A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-120
V
I
C
= -10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
-10
V
I
E
= -100 A
Collector Cut-Off Current
I
CBO
-100
-10
nA
μA
V
CB
= -10V
V
CB
= -120V
Tamb = 100°C
Emitter Cut-Off Current
I
EBO
-0.1
μA
V
EB
= -8V
Collector Emitter Cut-Off Current
I
CES
-10
μA
V
CES
= -120V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-1.3
-2.5
V
V
I
C
= -1A, I
B
= -1mA*
I
C
= -2A, I
B
= -2mA*
Base-Emitter Saturation Voltage
V
BE(sat)
-1.8
V
I
C
= -1A, I
B
= -1mA*
Base-Emitter Turn-On Voltage
V
BE(on)
-1.7
V
I
C
= -1A, V
CE
= -5V*
Static Forward Current Transfer
Ratio
h
FE
3K
3K
3K
2K
30K
I
C
= -50mA, V
CE
= -5V*
I
C
= -500mA, V
= -5V*
I
C
= -1A, V
CE
= -5V*
I
C
= -2A, V
CE
= -5V*
Transition Frequency
f
T
160
MHz
I
= -100mA, V
CE
= -10V
f= 20MHz
Input Capacitance
C
ibo
90
pF
V
CB
= -500mV, f= 1MHz
Output Capacitance
C
obo
15
pF
V
CB
= -10V, f= 1MHz
Turn-On Time
t
(on)
0.6
μs
I
C
= -500mA, V
CE
= -10V
I
B1
=I
B2
= -0.5mA
Turn-Off Time
t
(off)
0.8
μs
I
C
= -500mA, V
CE
= -10V
I
B1
=I
B2
= -0.5mA
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
3
Nb. Spice parameter data is available upon request for this device.
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| FCX705_02 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR |
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