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參數資料
| 型號： | FDB3652 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 100V, 61A, 16mз |
| 中文描述： | 9 A, 100 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數： | 3/11頁 |
| 文件大?。?/td> | 272K |
| 代理商： | FDB3652 |
2002 Fairchild Semiconductor Corporation
FDB3652 / FDP3652 / FDI3652 Rev. B
F
Typical Characteristics
T
C
= 25°C unless otherwise noted
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
0
25
50
75
25
50
75
100
125
150
175
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
2
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
T
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
0.5
0.2
0.1
0.05
0.02
0.01
DUTY CYCLE - DESCENDING ORDER
SINGLE PULSE
100
1000
50
I
D
,
t, PULSE WIDTH (s)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 10V
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
T
C
= 25
o
C
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| FDJ1028N | Plug-In Relay; Contacts:DPDT; Contact Carry Current:12A; Coil Voltage AC Max:12V; Relay Mounting:Plug-In; Relay Terminals:8-Pin Octal; Relay Options:Hermetically Sealed; Coil Resistance:72ohm; Contact Carrying Power:1.2W RoHS Compliant: Yes |
| FDJ1032C | Plug-In Relay; Contacts:DPDT; Contact Carry Current:12A; Coil Voltage AC Max:120V; Relay Mounting:Plug-In; Relay Terminals:8-Pin Octal; Relay Options:Hermetically Sealed; Coil Resistance:9100ohm; Contact Carrying Power:1.2W RoHS Compliant: Yes |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDB3652 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDB3652_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 100V, 61A, 16m?? |
| FDB3652_F085 | 功能描述:MOSFET N-Ch PowerTrench Trench Mos. RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB3652_Q | 功能描述:MOSFET N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB3652SB82059 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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