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參數資料
| 型號： | FDB4020P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor |
| 中文描述： | 16 A, 20 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數： | 4/7頁 |
| 文件大小： | 213K |
| 代理商： | FDB4020P |
F
FDP4020P Rev. A
Typical Characteristics
(continued)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient themal response will change depending on the circuit board design.
0
0.0001
200
400
600
800
1000
0.001
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R
θ
JC
= 4
o
C/W
T
A
= 25
o
C
0.1
1
10
100
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
R
DS(ON)
LIMIT
V
GS
= -4.5V
SINGLE PULSE
R
θ
JC
= 4
o
C/W
T
A
= 25
o
C
DC100ms
10ms
1ms
100
μ
s
0
200
400
600
800
1000
1200
1400
0
4
8
12
16
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
0.0001
0.001
0.01
0.1
1
10
0.05
0.1
0.2
0.5
1
t , TIME (sec)
T
Single Pulse
D = 0.5
0.1
0.05
0.2
r
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R =
4°C/W
T - T = P * R JC
P(pk)
t
1
t
2
0
1
2
3
4
5
0
3
6
9
12
Q
g
, GATE CHARGE (nC)
-
G
,
I
D
= -16A
V
DS
= -5V
-10V
-15V
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