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參數資料
型號: FDB44N25TM
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 250V N-Channel MOSFET
中文描述: 44 A, 250 V, 0.069 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: D2PAK-3
文件頁數: 1/8頁
文件大小: 722K
代理商: FDB44N25TM
2005 Fairchild Semiconductor Corporation
FDB44N25 Rev A
1
www.fairchildsemi.com
F
September 2005
UniFET
TM
FDB44N25
250V N-Channel MOSFET
Features
44A, 250V, R
DS(on)
= 0.069
@V
GS
= 10 V
Low gate charge ( typical 47 nC)
Low C
rss
( typical 60 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteristics
{
{
S
{
z
z
z
D
G
G
S
D
Symbol
Parameter
FDB44N25
Unit
V
DSS
I
D
Drain-Source Voltage
250
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
44
26.4
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
176
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
2055
mJ
Avalanche Current
(Note 1)
44
A
Repetitive Avalanche Energy
(Note 1)
30.7
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
307
2.45
W
W/
°
C
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Symbol
Parameter
Min.
Max.
Unit
R
θ
JC
R
θ
JA
*
R
θ
JA
* When mounted on the minimum pad size recommended (PCB Mount)
Thermal Resistance, Junction-to-Case
--
0.41
°
C/W
°
C/W
°
C/W
Thermal Resistance, Junction-to-Ambient*
--
40
Thermal Resistance, Junction-to-Ambient
--
62.5
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