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參數資料
| 型號： | FDB5690 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 60V N-Channel PowerTrenchTM MOSFET |
| 中文描述： | 32 A, 60 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | D2PAK-3 |
| 文件頁數： | 1/16頁 |
| 文件大小： | 391K |
| 代理商： | FDB5690 |
F
FDP5690/FDB5690 Rev. C
July 2000
2000
Fairchild Semiconductor International
FDP5690/FDB5690
60V N-Channel PowerTrench
TM
MOSFET
Features
32 A, 60 V. R
DS(ON)
= 0.027
@ V
GS
= 10 V
R
DS(ON)
= 0.032
@ V
GS
= 6 V.
Critical DC electrical parameters specified at evevated
temperature.
Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
High performance trench technology for extremely low
R
DS(ON)
.
175
°
C maximum junction temperature rating.
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Symbol
Parameter
FDP5690
FDB5690
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current - Continuous
- Pulsed
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
Operating and Storage Junction Temperature Range
60
±
20
32
100
58
0.4
V
V
A
W
P
D
W/
°
C
°
C
T
J
, T
STG
-65 to +175
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
2.6
62.5
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
FDB5690
FDP5690
Device
FDB5690
FDP5690
Reel Size
13
’’
Tube
Tape Width
24mm
N/A
Quantity
800
45
S
D
G
S
G
D
TO-220
FDP Series
D
G
S
TO-263AB
FDB Series
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters
using either synchronous or conventional switching PWM
controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
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| FDP5690 | 60V N-Channel PowerTrenchTM MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDB5800 | 功能描述:MOSFET 60V N-Ch Logic PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB5800_F085 | 功能描述:MOSFET 60V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB600 | 制造商:DEC 制造商全稱:DEC 功能描述:6 AMP FAST RECOVERY BRIDGE RECTIFIERS |
| FDB601 | 制造商:DEC 制造商全稱:DEC 功能描述:6 AMP FAST RECOVERY BRIDGE RECTIFIERS |
| FDB602 | 制造商:DEC 制造商全稱:DEC 功能描述:6 AMP FAST RECOVERY BRIDGE RECTIFIERS |
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