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參數資料
| 型號： | FDB6021P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 28 A, 20 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 80K |
| 代理商： | FDB6021P |
April 2001
PRELIMINARY
FDP6021P/FDB6021P
20V P-Channel 1.8V Specified PowerTrench
MOSFET
2001 Fairchild Semiconductor Corporation
FDP6021P/FDB6021P Rev B(W)
General Description
This P-Channel power MOSFET uses Fairchild’s low
voltage PowerTrench process. It has been optimized for
power management applications.
Applications
Battery management
Load switch
Voltage regulator
Features
–28 A, –20 V. R
DS(ON)
= 30 m
@ V
GS
= 4.5 V
R
DS(ON)
= 40 m
@ V
GS
= 2.5 V
R
DS(ON)
= 65 m
@ V
GS
= 1.8 V
Critical DC electrical parameters specified at
elevated temperature
High performance trench technology for extremely
low R
DS(ON)
175
°
C maximum junction temperature rating
.
S
G
D
TO-220
FDP Series
D
G
S
TO-263AB
FDB Series
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
P
D
Total Power Dissipation @ T
C
= 25
°
C
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
–20
±
8
–28
–80
37
0.25
–65 to +175
Units
V
V
A
W
W
°
C
°
C
(Note 1)
(Note 1)
Derate above 25
°
C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
4
°
C/W
°
C/W
62.5
Package Marking and Ordering Information
Device Marking
Device
FDP6021P
FDP6021P
FDB6021P
FDB6021P
Reel Size
Tube
13”
Tape width
n/a
24mm
Quantity
45
800 units
F
相關PDF資料 |
PDF描述 |
|---|---|
| FDP6021P | 30V N-Channel PowerTrench MOSFET |
| FDB6030 | N-Channel Logic Level PowerTrench MOSFET |
| FDP6030 | N-Channel Logic Level PowerTrench MOSFET |
| FDP6030BL | N-Channel Logic Level PowerTrench MOSFET |
| FDB6030BL | N-Channel Logic Level PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDB6021P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDB6021P_Q | 功能描述:MOSFET P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB6030 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDB6030BL | 功能描述:MOSFET N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB6030BL | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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