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參數資料
| 型號： | FDB5800 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | 80 A, 60 V, 0.0126 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數： | 2/7頁 |
| 文件大小： | 249K |
| 代理商： | FDB5800 |
F
FDB5800 Rev. A
www.fairchildsemi.com
2
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
Parameter
Ratings
60
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
< 102
o
C, V
GS
= 10V)
Continuous (T
C
< 90
o
C, V
GS
= 5V)
Continuous (T
amb
= 25
o
C, V
GS
= 10V, with R
θ
JA
= 43
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
80
80
14
A
A
A
A
Figure 4
652
242
1.61
-55 to 175
E
AS
mJ
W
W/
o
C
o
C
P
D
T
J
, T
STG
Thermal Characteristics
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263 ( Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
0.62
62.5
43
o
C/W
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
FDB5800
Device
FDB5800
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 48V
V
GS
= 0V
V
GS
=
±
20V
60
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
On Characteristics
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 80A, V
GS
= 10V
I
D
= 80A, V
GS
= 4.5V
I
D
= 80A, V
GS
= 5V
I
D
= 80A, V
GS
= 10V,
T
J
= 175
o
C
1.0
-
-
-
-
2.5
6.0
7.2
7.0
V
r
DS(ON)
Drain to Source On Resistance
4.6
5.8
5.5
m
-
10
12.6
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
R
G
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
-
-
6625
628
262
1.4
104
55
6.0
18.4
12.5
20.1
-
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
nC
V
GS
= 0.5V, f = 1MHz
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 30V
I
D
= 80A
I
g
= 1.0mA
135
72
-
-
-
-
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