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參數資料
| 型號： | FDB6670AS_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench SyncFET |
| 中文描述： | 62 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 100K |
| 代理商： | FDB6670AS_NL |
January 2005
2005 Fairchild Semiconductor Corporation
FDP6670AS/FDB6670AS Rev A(X)
FDP6670AS/FDB6670AS
30V N
-
Channel PowerTrench
SyncFET
General Description
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
and low gate charge. The FDP6670AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDP6670AS/FDB6670AS as the low-side switch in
a synchronous rectifier is indistinguishable from the
performance of the FDP6670A/FDB6670A in parallel
with a Schottky diode.
Features
31 A, 30 V.
R
DS(ON)
= 8.5 m
@ V
GS
= 10 V
R
DS(ON)
= 10.5 m
@ V
GS
= 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (28nC typical)
High performance trench technology for extremely
low R
DS(ON)
and fast switching
High power and current handling capability
S
G
D
TO-220
FDP Series
D
G
S
TO-263AB
FDB Series
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
P
D
Total Power Dissipation @ T
C
= 25
°
C
T
J
, T
STG
Operating and Storage Junction Temperature Range
T
L
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Ratings
30
±
20
62
150
62.5
0.5
–55 to +150
Units
V
V
A
W
W/
°
C
°
C
°
C
(Note 1)
Derate above 25
°
C
275
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
2.1
62.5
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
Device
FDB6670AS
FDB6670AS
FDB6670AS
FDB6670AS_NL
(Note 3)
FDP6670AS
FDP6670AS
Reel Size
13’’
13’’
Tube
Tape width
24mm
24mm
n/a
Quantity
800 units
800 units
45
FDP6670AS
FDP6670AS_NL
(Note 4)
Tube
n/a
45
F
相關PDF資料 |
PDF描述 |
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| FDB6670AL | N-Channel Logic Level PowerTrenchTM MOSFET |
| FDB6670S | 30V N-Channel PowerTrench? SyncFET |
| FDP6670S | 30V N-Channel PowerTrench? SyncFET |
| FDB6676S | 30V N-Channel PowerTrench SyncFET⑩ |
| FDP6676S | 30V N-Channel PowerTrench SyncFET⑩ |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDB6670S | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB6670S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D2-PAK |
| FDB6676 | 功能描述:MOSFET 30V N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB6676S | 功能描述:MOSFET 30V N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB6676S_Q | 功能描述:MOSFET 30V N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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