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參數資料
| 型號： | FDB6676S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench SyncFET⑩ |
| 中文描述： | 76 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | D2PAK-3 |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 116K |
| 代理商： | FDB6676S |
October 2001
2001 Fairchild Semiconductor Corporation
FDP6676S/FDB6676S Rev. C (W)
FDP6676S / FDB6676S
30V N
-
Channel PowerTrench
SyncFET
General Description
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
and low gate charge. The FDP/B6676S
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDP/B6676S as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDP/B6676 in parallel with a
Schottky diode.
Features
38 A, 30 V.
R
DS(ON)
= 6.5 m
@ V
GS
= 10 V
R
DS(ON)
= 8.0 m
@ V
GS
= 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (40nC typical)
High performance trench technology for extremely
low R
DS(ON)
and fast switching
High power and current handling capability
S
G
D
TO-220
FDP Series
D
G
S
TO-263AB
FDB Series
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
P
D
Total Power Dissipation @ T
C
= 25
°
C
T
J
, T
STG
Operating and Storage Junction Temperature Range
T
L
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Ratings
30
±
16
76
150
70
0.56
–55 to +150
Units
V
V
A
W
W/
°
C
°
C
°
C
(Note 1)
(Note 1)
Derate above 25
°
C
275
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
1.8
55
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
Device
FDB6676S
FDB6676S
FDP6676S
FDP6676S
Reel Size
13’’
Tube
Tape width
24mm
n/a
Quantity
800
45
F
相關PDF資料 |
PDF描述 |
|---|---|
| FDP6676S | 30V N-Channel PowerTrench SyncFET⑩ |
| FDB6676 | 30V N-Channel Logic Level PowerTrench MOSFET |
| FDP6676 | 30V N-Channel Logic Level PowerTrench MOSFET |
| FDB6690S | 30V N-Channel PowerTrench SyncFET |
| FDP6690 | 30V N-Channel PowerTrench SyncFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDB6676S_Q | 功能描述:MOSFET 30V N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB6690S | 功能描述:MOSFET 30V N-Ch PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB6690S_Q | 功能描述:MOSFET 30V N-Ch PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB66N15 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:150V N-Channel MOSFET |
| FDB66N15TM | 功能描述:MOSFET 150V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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