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參數(shù)資料
| 型號： | FDB6676 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | 75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 82K |
| 代理商： | FDB6676 |
April 2001
FDP6676/FDB6676
30V N-Channel Logic Level PowerTrench
MOSFET
2000 Fairchild Semiconductor Corporation
FDP6676/FDB6676 Rev C(W)
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“l(fā)ow side” synchronous rectifier operation, providing an
extremely low R
DS(ON)
.
N-Channel
MOSFET
has
been
designed
Applications
Synchronous rectifier
DC/DC converter
Features
42 A, 30 V.
R
DS(ON)
= 6.0 m
@ V
GS
= 10 V
R
DS(ON)
= 7.5 m
@ V
GS
= 4.5 V
Critical DC electrical parameters specified at
elevated temperature
High performance trench technology for extremely
low R
DS(ON)
175
°
C maximum junction temperature rating
.
S
G
D
TO-220
FDP Series
D
G
S
TO-263AB
FDB Series
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
P
D
Total Power Dissipation @ T
C
= 25
°
C
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
30
±
16
84
240
93
0.48
-65 to +175
Units
V
V
A
W
W
°
C
°
C
(Note 1)
(Note 1)
Derate above 25
°
C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
1.6
62.5
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
Device
FDP6676
FDP6676
FDB6676
FDB6676
Reel Size
Tube
13”
Tape width
n/a
24mm
Quantity
45
800 units
F
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDB6676S | 功能描述:MOSFET 30V N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB6676S_Q | 功能描述:MOSFET 30V N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB6690S | 功能描述:MOSFET 30V N-Ch PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB6690S_Q | 功能描述:MOSFET 30V N-Ch PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB66N15 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:150V N-Channel MOSFET |
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