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參數資料
| 型號： | FDB7030BL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level PowerTrench MOSFET(N溝道邏輯電平PowerTrench MOS場效應管) |
| 中文描述： | 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 412K |
| 代理商： | FDB7030BL |
July 1998
FDP7030BL
/
FDB7030BL
N-Channel Logic Level PowerTrench
TM
MOSFET
General Description
Features
_________________________________________________________________________________
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
Parameter
FDP7030BL
FDB7030BL
Units
V
DSS
V
GSS
Drain-Source Voltage
30
V
Gate-Source Voltage
±20
V
I
D
Drain Current
- Continuous
(Note 1)
60
A
- Pulsed
(Note 1)
180
P
D
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
65
W
0.43
W/
°
C
T
J
,T
STG
T
L
Operating and Storage Temperature Range
-65 to 175
°C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
275
°C
THERMAL CHARACTERISTICS
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
2.3
°
C/W
Thermal Resistance, Junction-to-Ambient
62.5
°
C/W
FDP7030BL Rev.C
60 A, 30 V. R
DS(ON)
= 0.009
@ V
= 10 V,
DS(ON)
= 0.0120
@ V
GS
= 4.5 V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
High performance trench technology for extremely low
R
DS(ON)
.
175°C maximum junction temperature rating.
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
DS(on)
specifications.
The result is a MOSFET that is easy and safer to drive (even
at very high frequencies), and DC/DC power supply designs
with higher overall efficiency.
S
D
G
1998 Fairchild Semiconductor Corporation
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDB7030BL_Q | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB7030BLS | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB7030L | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB7030L_L86Z | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB7030L_Q | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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