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參數資料
| 型號： | FDB8441 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 28 A, 40 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數： | 2/7頁 |
| 文件大小： | 275K |
| 代理商： | FDB8441 |
F
FDB8441 Rev.A
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 32V
V
GS
= 0V
V
GS
= ±20V
40
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
J
= 150°C
250
±100
I
GSS
Gate to Source Leakage Current
nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 80A, V
GS
= 10V
I
D
= 80A, V
GS
= 10V,
T
J
= 175°C
2
-
2.8
1.9
4
V
r
on)
Drain to Source On Resistance
2.5
m
-
3.3
4.3
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Q
g(TOT)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
-
15000
1250
685
1.1
215
29
60
32
49
-
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0.5V, f = 1MHz
V
GS
= 0 to 10V
V
GS
= 0 to 2V
V
DD
= 20V
I
D
= 35A
I
g
= 1mA
280
38
-
-
-
DS(
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
40
±20
80
28
See Figure 4
947
300
2
-55 to 175
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (
T
C
< 160
o
C,
V
GS
= 10V)
Continuous (
T
amb
= 25
o
C, V
GS
= 10
V, with R
θ
JA
= 43
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
A
E
AS
mJ
W
W/
o
C
o
C
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient (Note 2)
Thermal Resistance Junction to Ambient, 1in
2
copper pad area
0.5
62
43
o
C/W
o
C/W
o
C/W
Device Marking
FDB8441
Device
FDB8441
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDB8441_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 40V, 80A, 2.5m?? |
| FDB8441_F085 | 功能描述:MOSFET 40V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB8442 | 功能描述:MOSFET 40V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB8442_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 40V, 80A, 2.9m?? |
| FDB8442_F085 | 功能描述:MOSFET 40V NCHAN PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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