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參數資料
| 型號： | FDB8441 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 28 A, 40 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數： | 5/7頁 |
| 文件大?。?/td> | 275K |
| 代理商： | FDB8441 |
F
FDB8441 Rev.A
www.fairchildsemi.com
5
Figure 5.
1
10
100
0.1
1
10
100
1000
D
,
LIMITED
BY PACKAGE
10us
100us
1ms
10ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS
(on)
SINGLE PULSE
T
J
= MAX RATED
T
C
=
25
o
C
DC
4000
Forward Bias Safe Operating Area
0.01
0.1
1
10
100
1000
1
10
100
500
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
5000
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
NOTE:
Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7.
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
40
80
120
160
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 5V
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
Transfer Characteristics
Figure 8.
0
1
2
3
4
0
40
80
120
160
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 3.5V
V
GS
= 4V
Saturation Characteristics
Figure 9.
Variation vs Gate to Source Voltage
3
4
V
GS
, GATE TO SOURCE VOLTAGE
(
V
)
5
6
7
8
9
10
0
10
20
30
40
50
r
D
,
O
(
m
)
T
J
= 25
o
C
T
J
= 175
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
Drain to Source On-Resistance
Figure 10.
Resistance vs Junction Temperature
-80
-40
T
J
, JUNCTION TEMPERATURE
(
o
C
)
0
40
80
120
160
200
0.6
0.8
1.0
1.2
1.4
1.6
1.8
N
I
D
= 80A
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
Normalized Drain to Source On
Typical Characteristics
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDB8441_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 40V, 80A, 2.5m?? |
| FDB8441_F085 | 功能描述:MOSFET 40V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB8442 | 功能描述:MOSFET 40V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB8442_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 40V, 80A, 2.9m?? |
| FDB8442_F085 | 功能描述:MOSFET 40V NCHAN PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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