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參數資料
| 型號： | FDB8453LZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench㈢ MOSFET |
| 中文描述： | 50 A, 40 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT, TO-263AB, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 256K |
| 代理商： | FDB8453LZ |
tm
August 2007
2007 Fairchild Semiconductor Corporation
FDB8453LZ Rev.C1
www.fairchildsemi.com
1
F
FDB8453LZ
N-Channel PowerTrench
MOSFET
40V, 50A, 7.0m
Features
Max r
DS(on)
= 7.0m
at V
GS
= 10V, I
D
= 17.6A
Max r
DS(on)
= 9.0m
at V
GS
= 4.5V, I
D
= 14.9A
HBM ESD protection level of 7.6kV typical (note 4)
Fast Switching
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
process that has
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
Applications
Inverter
Power Supplies
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
40
±20
50
74
16.1
100
253
66
3.1
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited) T
C
= 25°C
-Continuous (Silicon limited) T
C
= 25°C
-Continuous T
A
= 25°C (Note 1a)
-Pulsed
Single Pulse Avalanche Energy (Note 3)
Power Dissipation T
C
= 25°C
Power Dissipation T
A
= 25°C (Note 1a)
Operating and Storage Junction Temperature Range
I
D
A
E
AS
mJ
P
D
W
T
J
, T
STG
°C
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
1.88
40
°C/W
Device Marking
FDB8453LZ
Device
FDB8453LZ
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
D
S
G
D
G
S
TO-263AB
FDB Series
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