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參數資料
| 型號： | FDB8453LZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench㈢ MOSFET |
| 中文描述： | 50 A, 40 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT, TO-263AB, 3 PIN |
| 文件頁數： | 4/6頁 |
| 文件大小： | 256K |
| 代理商： | FDB8453LZ |
F
www.fairchildsemi.com
4
2007 Fairchild Semiconductor Corporation
FDB8453LZ Rev.C1
Figure 7.
0
10
20
30
40
50
0
2
4
6
8
10
I
D
= 17.6A
V
DD
= 25V
V
DD
= 15V
V
G
,
Q
g
, GATE CHARGE (nC)
Gate Charge Characteristics
V
DD
= 20V
Figure 8.
0.1
1
10
100
1000
4000
40
f = 1MHz
V
GS
= 0V
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
Capacitance vs Drain
to Source Voltage
Figure 9.
0.01
0.1
1
10
100
1000
1
10
20
T
J
= 25
o
C
T
J
= 125
o
C
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
Unclamped Inductive
Switching Capability
Figure 10.
0
5
10
15
20
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
V
GS
= 0V
T
J
= 25
o
C
T
J
= 150
o
C
V
GS,
GATE TO SOURCE VOLTAGE (V)
I
g
,
G
Gate Leakage Current vs Gate to
Source Voltage
Figure 11. Maximum Continuous Drain
Current vs Ambient Temperature
25
50
75
100
125
150
0
20
40
60
80
Limited by Package
R
θ
JC
= 1.88
o
C/W
V
GS
= 4.5V
V
GS
= 10V
I
D
,
D
T
C
,
CASE TEMPERATURE
(
o
C
)
Figure 12.
0.1
1
10
100
0.1
1
10
100
DC
10ms
1ms
100us
THIS AREA IS
LIMITED BY r
DS(on)
200
SINGLE PULSE
T
J
= MAX RATED
R
θ
JC
= 1.88
o
C/W
T
C
=
25
o
C
I
D
,
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Forward Bias Safe
Operating Area
Typical Characteristics
T
J
= 25°C unless otherwise noted
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