- 您現在的位置：買賣IC網 > PDF目錄375765 > FDB8880 (FAIRCHILD SEMICONDUCTOR CORP) N-Channel PowerTrench MOSFET PDF資料下載
參數資料
| 型號： | FDB8880 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 11 A, 30 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數： | 2/11頁 |
| 文件大小： | 231K |
| 代理商： | FDB8880 |
2005 Fairchild Semiconductor Corporation
FDP8880 / FDB8880 Rev. A
www.fairchildsemicom
F
2
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Symbol
V
DSS
V
GS
Parameter
Ratings
30
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 25
o
C, V
GS
= 4.5V)
Continuous (T
amb
= 25
o
C, V
GS
= 10V, with R
θ
JA
= 43
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
54
48
11
A
A
A
A
Figure 4
31
55
0.37
-55 to 175
E
AS
mJ
W
W/
o
C
o
C
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-220,TO-263
Thermal Resistance Junction to Ambient TO-220,TO-262 ( Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
2.73
62
43
o
C/W
o
C/W
o
C/W
Device Marking
FDP8880
FDB8880
FDP8880
FDB8880
Device
FDP8880
FDB8880
Package
TO-220AB
TO-263AB
TO-220AB
TO-263AB
Reel Size
Tube
330mm
Tube
330mm
Tape Width
N/A
24mm
N/A
24mm
Quantity
50 units
800 units
50 units
800 units
FDP8880_NL (Note 3)
FDB8880_NL (Note 3)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 24V
V
GS
= 0V
V
GS
=
±
20V
30
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 40A, V
GS
= 10V
I
D
= 40A, V
GS
= 4.5V
I
D
= 40A, V
GS
= 10V,
T
J
= 175
o
C
1.2
-
-
-
2.5
V
r
DS(ON)
Drain to Source On Resistance
0.0095 0.0116
0.012
0.0145
-
0.015
0.019
相關PDF資料 |
PDF描述 |
|---|---|
| FDP8880 | N-Channel PowerTrench MOSFET |
| FDB8896 | N-Channel PowerTrench MOSFET 30V, 93A, 5.7 m ohm |
| FDC10-48S05W | 10 watts of output power from a 2 x 1 x 0.4 inch package |
| FDC10 | 10 watts of output power from a 2 x 1 x 0.4 inch package |
| FDC10-12D05 | 10 watts of output power from a 2 x 1 x 0.4 inch package |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDB8896 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB8896_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDB8896_F085 | 功能描述:MOSFET 30V N-CHAN PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB9403 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power Trench?? MOSFET 40V, 110A, 1.2m?? |
| FDB9403_F085 | 功能描述:MOSFET 40V 110A 1.2m? N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。