- 您現在的位置：買賣IC網 > PDF目錄375767 > FDC5614 (Fairchild Semiconductor Corporation) 60V P-Channel Logic Level PowerTrench MOSFET PDF資料下載
參數資料
| 型號： | FDC5614 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 60V P-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | 60V的P通道MOSFET的邏輯電平的PowerTrench |
| 文件頁數： | 2/5頁 |
| 文件大小： | 140K |
| 代理商： | FDC5614 |
FDC5614P Rev C1 (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= –250
μ
A
I
D
= –250
μ
A, Referenced to
25
°
C
V
DS
= –48 V,
V
GS
= 20V,
V
GS
= –20 V
–60
V
Breakdown Voltage Temperature
–49
mV/
°
C
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
–1
100
–100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= –250
μ
A
I
D
= –250
μ
A,Referenced to 25
°
C
V
GS
= –10 V,
V
GS
= –4.5 V,
V
GS
= –10 V, I
D
= –3 A T
J
=125
°
C
V
GS
= –10 V,
V
DS
= –5 V,
–1
–1.6
4
–3
V
Gate Threshold Voltage
mV/
°
C
I
D
= –3 A
I
D
= –2.7 A
82
105
130
8
105
135
190
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
V
DS
= –5 V
I
D
= –3 A
–20
A
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
759
90
39
pF
pF
pF
V
DS
= –30 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
7
10
19
12
15
2.5
3.0
14
20
34
22
24
ns
ns
ns
ns
nC
nC
nC
V
DD
= –30 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
V
DS
= –30V,
V
GS
= –10 V
I
D
= –3.0 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
–1.3
–1.2
A
V
V
GS
= 0 V,
I
S
= –1.3 A
(Note 2)
–0.8
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a. 78°C/W when mounted on a 1in
2
pad of 2oz copper on FR-4 board.
b. 156°C/W when mounted on a minimum pad.
2.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
F
相關PDF資料 |
PDF描述 |
|---|---|
| FDC6000NZ | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| FDC6020C | Complementary PowerTrench MOSFET |
| FDC602P | P-Channel 2.5V PowerTrench Specified MOSFET(門限電壓2.5V的P溝道PowerTrench指定MOS場效應管) |
| FDC602 | P-Channel 2.5V Specified PowerTrench MOSFET |
| FDC6036P | P-Channel 1.8V Specified PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDC5614P | 功能描述:MOSFET SSOT-6 P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC5614P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SMD SSOT-6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, P, SMD, SSOT-6 |
| FDC5614P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR |
| FDC5614P_D87Z | 功能描述:MOSFET 60V P-Ch Logic Lev PowerTrench MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC5614P-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDC5614P Series 60 V 105 mOhms P-Channel Logic Level PowerTrench Mosfet - SSOT-6 |
發布緊急采購，3分鐘左右您將得到回復。