- 您現在的位置：買賣IC網 > PDF目錄375768 > FDC6020C (FAIRCHILD SEMICONDUCTOR CORP) Complementary PowerTrench MOSFET PDF資料下載
參數資料
| 型號： | FDC6020C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Complementary PowerTrench MOSFET |
| 中文描述： | 5.9 A, 20 V, 0.027 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, FLMP, SUPERSOT-6 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 211K |
| 代理商： | FDC6020C |
November 2003
2003 Fairchild Semiconductor Corporation
FDC6020C Rev B(W)
FDC6020C
Complementary PowerTrench
MOSFET
General Description
These N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
DC/DC converter
Load switch
Motor Driving
Features
Q1
–4.2 A, –20V. R
DS(ON)
= 55 m
@ V
GS
= – 4.5 V
R
DS(ON)
= 82 m
@ V
GS
= – 2.5 V
Q2
5.9 A, 20V. R
DS(ON)
= 27 m
@ V
GS
= 4.5 V
R
DS(ON)
= 39 m
@ V
GS
= 2.5 V
Low gate charge
High performance trench technology for extremely
low R
DS(ON)
.
FLMP SSOT-6 package: Enhanced thermal
performance in industry-standard package size
3
2
1
4
5
6
Bottom Drain Contact
Bottom Drain Contact
Q2 (N)
Q1 (P)
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Parameter
Q1
–20
±
12
–4.2
–20
Q2
20
±
12
5.9
20
Units
V
V
A
W
°
C
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Power Dissipation for Dual Operation
Power Dissipation for single Operation
(Note 1a)
- Pulsed
(Note 1a)
1.6
1.8
1.2
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
–55 to +150
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
68
1
°
C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
.020
FDC6020C
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
相關PDF資料 |
PDF描述 |
|---|---|
| FDC602P | P-Channel 2.5V PowerTrench Specified MOSFET(門限電壓2.5V的P溝道PowerTrench指定MOS場效應管) |
| FDC602 | P-Channel 2.5V Specified PowerTrench MOSFET |
| FDC6036P | P-Channel 1.8V Specified PowerTrench MOSFET |
| FDC604 | P-Channel 1.8V Specified PowerTrench MOSFET |
| FDC604P | P-Channel 1.8V Specified PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDC6020C_F077 | 功能描述:MOSFET Complementary PwrTrh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC60-24D05 | 制造商:ASTRODYNE 制造商全稱:Astrodyne Corporation 功能描述:Isolated and Regulated 60 WATT Modular DC/DC Converters |
| FDC60-24D12 | 制造商:ASTRODYNE 制造商全稱:Astrodyne Corporation 功能描述:Isolated and Regulated 60 WATT Modular DC/DC Converters |
| FDC60-24D15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:60 WATTS OUTPUT POWER |
| FDC60-24D3305 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:60 WATTS OUTPUT POWER |
發布緊急采購，3分鐘左右您將得到回復。