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參數資料
| 型號： | FDC6036P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel 1.8V Specified PowerTrench MOSFET |
| 中文描述： | 5 A, 20 V, 0.044 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, FLMP, SUPERSOT-6 |
| 文件頁數： | 2/7頁 |
| 文件大?。?/td> | 163K |
| 代理商： | FDC6036P |
FDC6036P Rev C2 (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV
DSS
BV
DSS
T
J
Drain–Source BreakdownVoltage V
GS
= 0 V,
Breakdown Voltage Temperature
Coefficient
I
D
= –250
μ
A
–20
V
I
D
= –250
μ
A, Referenced to 25°C
–24
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= –16 V, V
GS
= 0 V
–1
μ
A
I
GSS
Gate–Body Leakage
V
GS
= ±8 V,
V
DS
= 0 V
±100
nA
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
V
DS
= V
GS
,
I
D
= –250
μ
A, Referenced to 25
°
C
I
D
= –250
μ
A
–0.4
–0.7
4.4
–1.5
V
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
mV/
°
C
V
GS
= –4.5 V,
V
GS
= –2.5 V,
V
GS
= –1.8 V,
V
GS
= –4.5 V,I
D
= –5 A,T
J
=125
°
C
V
DS
= –5 V,
I
D
= –5.0 A
I
D
= –4.0 A
I
D
= –3.2 A
37
52
74
51
16
44
64
95
61
m
gfs
Forward Transconductance
I
D
= –5 A
S
Dynamic Characteristics
C
iss
Input Capacitance
992
pF
C
oss
Output Capacitance
169
pF
C
rss
Reverse Transfer Capacitance
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
85
pF
Rg
Gate Resistance
V
GS
= 15 mV
f = 1.0 MHz
8.6
m
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
12
24
ns
t
r
Turn–On Rise Time
10
20
ns
t
d(off)
Turn–Off Delay Time
40
64
ns
t
f
Turn–Off Fall Time
V
DD
= –10 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
20
36
ns
Q
g
Total Gate Charge
10
14
nC
Q
gs
Gate–Source Charge
1.7
nC
Q
gd
Gate–Drain Charge
V
DS
= –10 V,
V
GS
= –4.5 V
I
D
= –5 A,
2.0
nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
–1.25
A
V
GS
= 0 V,
I
S
= –1.25 A
(Note 2)
–0.7
–1.2
V
trr
Diode Reverse Recovery Time
19
ns
Qrr
Diode Reverse Recovery Charge
I
F
= –5 A,
d
iF
/d
t
= 100 A/μs
7.8
nC
F
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