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參數資料
| 型號： | FDC606P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel 1.8V Specified PowerTrench MOSFET |
| 中文描述： | 6000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, SUPERSOT-6 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 154K |
| 代理商： | FDC606P |
December 2001
2001 Fairchild Semiconductor Corporation
FDC606P Rev E (W)
FDC606P
P-Channel 1.8V Specified PowerTrench
MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s low voltage PowerTrench process. It has
been optimized for battery power management
applications.
Applications
Battery management
Load switch
Battery protection
Features
–6 A, –12 V.
R
DS(ON)
= 26 m
@ V
GS
= –4.5 V
R
DS(ON)
= 35 m
@ V
GS
= –2.5 V
R
DS(ON)
= 53 m
@ V
GS
= –1.8 V
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
D
D
D
S
D
G
SuperSOT -6
6
5
4
1
2
3
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Ratings
–12
±
8
–6
–20
1.6
0.8
–55 to +150
Units
V
V
A
W
°
C
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Maximum Power Dissipation
(Note 1a)
– Pulsed
(Note 1a)
(Note 1b)
T
J
, T
STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
.606
FDC606P
(Note 1a)
78
30
°
C/W
°
C/W
(Note 1)
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDC606P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SMD SUPERSOT-6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, P, SMD, SUPERSOT-6 |
| FDC606P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDC606P-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDC606P Series 20 V 26 mOhms P-Channel 1.8V Specified PowerTrench Mosfet SSOT-6 |
| FDC608PZ | 功能描述:MOSFET -20V P-Channel 2.5V PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC610PZ | 功能描述:MOSFET -30V P-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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