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參數(shù)資料
| 型號： | FDC606P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel 1.8V Specified PowerTrench MOSFET |
| 中文描述： | 6000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, SUPERSOT-6 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大小： | 154K |
| 代理商： | FDC606P |
FDC606P Rev E (W)
Typical Characteristics
0
1
2
3
4
5
0
5
10
15
20
25
Q
g
, GATE CHARGE (nC)
-
G
,
I
D
= -6A
V
DS
= -4V
-6V
-8V
0
500
1000
1500
2000
2500
0
3
6
9
12
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
DC
1s
100ms
100
μ
s
R
DS(ON)
LIMIT
V
GS
= -4.5V
SINGLE PULSE
R
θ
JA
= 156
o
C/W
T
A
= 25
o
C
10ms
1ms
0
2
4
6
8
10
0.01
0.1
1
10
100
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
= 156°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 156
o
C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC606P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SMD SUPERSOT-6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, P, SMD, SUPERSOT-6 |
| FDC606P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDC606P-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDC606P Series 20 V 26 mOhms P-Channel 1.8V Specified PowerTrench Mosfet SSOT-6 |
| FDC608PZ | 功能描述:MOSFET -20V P-Channel 2.5V PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC610PZ | 功能描述:MOSFET -30V P-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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