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參數(shù)資料
| 型號(hào)： | FDC6303 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Digital FET, Dual N-Channel |
| 中文描述： | 數(shù)字場(chǎng)效應(yīng)管，雙N溝道 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 72K |
| 代理商： | FDC6303 |
FDC6303N Rev.C
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 8. Capacitance Characteristics
.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical And Thermal Characteristics
0
0.4
0.8
1.2
1.6
2
0
1
2
3
4
5
Q , GATE CHARGE (nC)
V
G
I = 0.5A
10V
15V
V = 5V
0.1
0.2
0.5
1
2
5
10
20
40
0.01
0.03
0.1
0.3
1
5
V , DRAI N-SOURCE VOLTAGE (V)
I
D
V = 4.5V
SINGLE PULSE
R = See note 1b
T = 25°C
GS
JA
DC
1s
10ms
100ms
RDSON LMT
1ms
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.01
0.02
0.05
0.1
0.2
0.5
1
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
r
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = See Note 1b
T - T = P * R JA
P(pk)
t
1
t
2
Figure 11. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal
response will change depending on the circuit board design.
0.1
0.5
1
2
5
10
25
5
10
20
50
100
150
V , DRAIN TO SOURCE VOLTAGE (V)
C
C s
f = 1 MHz
V = 0V
C ss
C ss
0.01
0.1
1
10
100
300
0
1
2
3
4
5
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R =See note 1b
T = 25°C
A
JA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDC6303N | Digital FET, Dual N-Channel |
| FDC6304P | RES 160-OHM 0.1% 0.125W 25PPM THIN-FILM SMD-0805 TR-7-PA ROHS |
| FDC6305 | Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDC6305N | Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDC6306P | Dual P-Channel 2.5V Specified PowerTrench⑩ MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC6303N | 功能描述:MOSFET SSOT-6 N-CH 25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6303N_Q | 功能描述:MOSFET SSOT-6 N-CH 25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6304P | 功能描述:MOSFET SSOT-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6304P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDC6304P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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