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參數資料
| 型號： | FDC6303N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Digital FET, Dual N-Channel |
| 中文描述： | 680 mA, 25 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 72K |
| 代理商： | FDC6303N |
August 1997
FDC6303N
Digital FET, Dual N-Channel
General Description
Features
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
FDC6303N
Units
V
DSS
Drain-Source Voltage
25
V
V
GSS
Gate-Source Voltage
8
V
I
D
Drain Current
- Continuous
0.68
A
- Pulsed
2
P
D
Maximum Power Dissipation
(Note 1a)
0.9
W
(Note 1b)
0.7
T
J
,T
STG
ESD
Operating and Storage Temperature Range
-55 to 150
°C
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
6.0
kV
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
140
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
60
°C/W
FDC6303N Rev.C
25 V, 0.68 A continuous, 2 A Peak.
R
DS(ON)
= 0.6
@ V
GS
= 2.7 V
R
DS(ON)
= 0.45
@ V
GS
= 4.5 V.
Very low level gate drive requirements allowing direct
operation in 3V circuits. V
GS(th)
< 1.5 V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Replace multiple NPN digital transistors (IMHxA series)
with one DMOS FET.
These dual N-Channel logic level enhancement mode field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state
resistance. This device has been designed especially for
low voltage applications as a replacement for digital
transistors in load switching applications. Since bias
resistors are not required this one N-Channel FET can
replace several digital transistors with different bias
resistors like the IMHxA series.
1
5
3
2
4
6
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
Mark: .303
1997 Fairchild Semiconductor Corporation
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDC6303N_Q | 功能描述:MOSFET SSOT-6 N-CH 25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6304P | 功能描述:MOSFET SSOT-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6304P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDC6304P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDC6304P_Q | 功能描述:MOSFET SSOT-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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