欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: FDC6333C
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: 30V N & P-Channel PowerTrench MOSFETs
中文描述: 2500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SUPERSOT-6
文件頁數: 6/8頁
文件大小: 98K
代理商: FDC6333C
FDC6333C Rev C (W)
Typical Characteristics: P-Channel
0
2
4
6
8
10
0
1
2
3
4
5
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
-4.0V
-4.5V
V
GS
= -10V
-6.0V
-3.5V
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
-I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= -3.5V
-4.5V
-5.0V
-10V
-6.0V
-4.0V
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= -2A
V
GS
=-10V
0
0.1
0.2
0.3
0.4
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= -1A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 13. On-Resistance Variation
withTemperature.
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
0
1
2
3
4
5
1.5
2.5
3.5
4.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
A
= -55
o
C
125
o
C
V
DS
= -5V
25
o
C
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
-
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
相關PDF資料
PDF描述
FDC633N N-Channel Enhancement Mode Field Effect Transistor(P溝道增強型MOS場效應晶體管)
FDC634 P-Channel Enhancement Mode Field Effect Transistor
FDC634P P-Channel Enhancement Mode Field Effect Transistor(P溝道增強型MOS場效應晶體管)
FDC636P P-Channel Logic Level Enhancement Mode Field Effect Transistor
FDC637AN Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET
相關代理商/技術參數
參數描述
FDC6333C 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET NP CH 30V 2.5/2A SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NP CH, 30V, 2.5/2A, SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NP CH, 30V, 2.5/2A, SSOT6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):95mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V ;RoHS Compliant: Yes
FDC6333C 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N/P CH MOSFET, 30V SUPER SOT-6
FDC6333C_Q 功能描述:MOSFET 30V/-30V N/P RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC6333C-CUT TAPE 制造商:FAIRCHILD 功能描述:FDC6333C Series 30 V 95 mOhm N & P-Channel PowerTrench Mosfet - SSOT-6
FDC633N 功能描述:MOSFET SSOT-6 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
主站蜘蛛池模板: 弋阳县| 富源县| 蒙自县| 建始县| 杭州市| 弥渡县| 察隅县| 瑞安市| 保德县| 深水埗区| 武冈市| 民丰县| 鄂伦春自治旗| 永仁县| 恩施市| 郑州市| 海兴县| 界首市| 两当县| 武汉市| 和平区| 余庆县| 高邑县| 武平县| 祁门县| 淮滨县| 牡丹江市| 历史| 都安| 松原市| 老河口市| 汕尾市| 拉萨市| 昆山市| 郎溪县| 二连浩特市| 日照市| 巍山| 永靖县| 临夏市| 南雄市|