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參數(shù)資料
| 型號： | FDC636P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 2800 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 198K |
| 代理商： | FDC636P |
May 1998
FDC636P
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These P-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. These devices are particularly suited
for low voltage applications such as cellular phone and
notebook computer power management and other battery
powered circuits where high-side switching, and low in-line
power loss are needed in a very small outline surface
mount package.
Features
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol Parameter
FDC636P
Units
V
DSS
V
GSS
Drain-Source Voltage
-20
V
Gate-Source Voltage
±8
V
I
D
Drain Current - Continuous
(Note 1a)
-2.8
A
- Pulsed
-11
P
D
Maximum Power Dissipation
(Note 1a)
1.6
W
(Note 1b)
0.8
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
J A
R
θ
J C
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
30
°C/W
FDC636P Rev.B
-2.8 A, -20 V. R
DS(ON)
= 0.130
@ V
GS
= -4.5 V
R
DS(ON)
= 0.180
@ V
GS
= -2.5 V.
SuperSOT
TM
-6 package design using copper lead frame for
superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
SOIC-16
SOT-23
SuperSOT
TM
-8
SO-8
SOT-223
SuperSOT
TM
-6
D
D
D
S
D
G
SuperSOT -6
.636
pin
1
3
5
6
4
1
2
1998 Fairchild Semiconductor Corporation
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PDF描述 |
|---|---|
| FDC637AN | Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET |
| FDC637BNZ | N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 6.2A, 24mヘ |
| FDC638APZ | P-Channel 2.5V PowerTrench Specified MOSFET -20V, -4.5A, 43mohm |
| FDC638 | P-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDC638P | P-Channel 2.5V Specified PowerTrenchTM MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDC636P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-6 |
| FDC636P | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTORS MOSFET TRANSISTOR POLARITY: |
| FDC636P_F095 | 功能描述:MOSFET -20V -2.8A P-CH ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC637AN | 功能描述:MOSFET SSOT-6 N-CH 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC637AN | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET, 20V, 6.2A, SUPER SOT-6 |
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