- 您現在的位置：買賣IC網 > PDF目錄375769 > FDC636P (FAIRCHILD SEMICONDUCTOR CORP) P-Channel Logic Level Enhancement Mode Field Effect Transistor PDF資料下載
參數資料
| 型號： | FDC636P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 2800 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數： | 2/4頁 |
| 文件大小： | 198K |
| 代理商： | FDC636P |
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA, Referenced to 25
o
C
-20
V
Breakdown Voltage Temp. Coefficient
-22
mV/
o
C
Zero Gate Voltage Drain Current
V
DS
= -16 V, V
GS
= 0 V
-1
μA
T
J
= 55
o
C
-10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
V
GS(th)
/
T
J
R
DS(ON)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 μA
I
D
= -250 μA, Referenced to 25
o
C
-0.4
-0.6
-1
V
Gate Threshold VoltageTemp.Coefficient
2
mV/
o
C
Static Drain-Source On-Resistance
V
GS
= -4.5 V, I
D
= -2.8 A
0.11
0.13
T
J
= 125
o
C
0.17
0.21
V
GS
= -2.5 V, I
D
= -2.2 A
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -5 V, I
D
= -2.8 A
0.146
0.18
I
D(on)
g
FS
DYNAMIC CHARACTERISTICS
On-State Drain Current
-11
A
Forward Transconductance
4
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
390
pF
Output Capacitance
170
pF
Reverse Transfer Capacitance
45
pF
t
D(on)
t
r
Turn - On Delay Time
V
DD
= -10 V, I
D
= -1 A,
V
GS
= -4.5 V, R
GEN
= 6
30
48
ns
Turn - On Rise Time
26
42
ns
t
D(off)
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS
Turn - Off Delay Time
8
16
ns
Turn - Off Fall Time
15
27
ns
Total Gate Charge
V
DS
= -5 V, I
D
= -2.8 A,
V
GS
= -4.5 V
6
8.5
nC
Gate-Source Charge
0.9
nC
Gate-Drain Charge
1
nC
I
S
V
SD
Continuous Source Diode Current
-1.3
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -1.3 A
(Note 2)
-0.77
-1.2
V
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
a. 78
o
C/W when mounted on a 1 in
2
pad of 2oz Cu on FR-4 board.
b. 156
o
C/W when mounted on a minimum pad of 2oz Cu on FR-4 board.
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDC636P Rev.B
相關PDF資料 |
PDF描述 |
|---|---|
| FDC637AN | Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET |
| FDC637BNZ | N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 6.2A, 24mヘ |
| FDC638APZ | P-Channel 2.5V PowerTrench Specified MOSFET -20V, -4.5A, 43mohm |
| FDC638 | P-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDC638P | P-Channel 2.5V Specified PowerTrenchTM MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDC636P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-6 |
| FDC636P | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTORS MOSFET TRANSISTOR POLARITY: |
| FDC636P_F095 | 功能描述:MOSFET -20V -2.8A P-CH ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC637AN | 功能描述:MOSFET SSOT-6 N-CH 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC637AN | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET, 20V, 6.2A, SUPER SOT-6 |
發布緊急采購，3分鐘左右您將得到回復。