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參數(shù)資料
| 型號： | FDC636P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 2800 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 198K |
| 代理商： | FDC636P |
FDC636P Rev.B
0
1
2
3
4
5
0
3
6
9
12
15
-V , DRAIN-SOURCE VOLTAGE (V)
-
V = -4.5V
- 2.5V
D
- 2.0V
-3.0V
-3.5V
0
3
6
9
12
15
0.8
1
1.2
1.4
1.6
1.8
2
-I , DRAIN CURRENT (A)
D
V = -2.5V
R
D
-4.5V
-3.0V
-4.0V
-3.5V
-5.0V
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation
with Temperature
.
Figure 5. Transfer Characteristics.
0
0.2
-V , BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
1.4
0.0001
0.001
0.01
0.1
1
10
-
S
25°C
-55°C
V = 0V
J
Figure 4. On-Resistance
Variation with
Gate-To-Source Voltage.
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
V = - 4.5V
I = - 2.8A
R
D
1
2
3
4
5
0
0.1
0.2
0.3
0.4
0.5
-V ,GATE TO SOURCE VOLTAGE (V)
R
D
T = 125°C
25°C
I = -1.4A
0
1
2
3
4
0
2
4
6
8
10
-V , GATE TO SOURCE VOLTAGE (V)
-
D
V = -5V
T = -55°C
125°C
25°C
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
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| FDC637BNZ | N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 6.2A, 24mヘ |
| FDC638APZ | P-Channel 2.5V PowerTrench Specified MOSFET -20V, -4.5A, 43mohm |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDC636P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-6 |
| FDC636P | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTORS MOSFET TRANSISTOR POLARITY: |
| FDC636P_F095 | 功能描述:MOSFET -20V -2.8A P-CH ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC637AN | 功能描述:MOSFET SSOT-6 N-CH 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC637AN | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET, 20V, 6.2A, SUPER SOT-6 |
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