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參數資料
| 型號： | FDC6506 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual P-Channel Logic Level PowerTrench⑩ MOSFET |
| 中文描述： | 雙P溝道邏輯電平的PowerTrench MOSFET的⑩ |
| 文件頁數： | 4/8頁 |
| 文件大小： | 204K |
| 代理商： | FDC6506 |
F
FDC6506P Rev. C
Typical Characteristics
(continued)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.01
0.02
0.05
0.1
0.2
0.5
1
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
r
Duty Cycle, D = t / t
2
T - T = P * R JA
P(pk)
t
1
t
2
R (t) = r(t) * R
R =
180
°C/W
0.01
0.1
1
10
100
300
0
1
2
3
4
5
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R =180°C/W
T = 25°C
A
JA
0.1
0.2
0.5
-V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
20
50
0.01
0.03
0.1
0.3
1
3
10
30
-
RDS(ON) LIMIT
D
V = -10V
SINGLE PULSE
R = 180°C/W
T = 25°C
JA
DC
1s
100ms
10ms
1ms
100us
0
2
4
6
8
10
0
1
2
3
4
Q
g
, GATE CHARGE (nC)
-
G
,
I
D
= -1.8A
V
DS
=-5.0V
-10V
-15V
0
60
120
180
240
300
0
6
12
18
24
30
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
iss
C
oss
C
rss
f=1MHz
V
GS
=0V
相關PDF資料 |
PDF描述 |
|---|---|
| FDC6506P | Dual P-Channel Logic Level PowerTrench⑩ MOSFET |
| FDC653 | N-Channel Enhancement Mode Field Effect Transistor |
| FDC653N | N-Channel Enhancement Mode Field Effect Transistor |
| FDC654P | P-Channel Enhancement Mode Field Effect Transistor |
| FDC655BN | Single N-Channel, Logic Level, PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDC6506P | 功能描述:MOSFET SSOT-6 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6506P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-6 |
| FDC6506P_Q | 功能描述:MOSFET SSOT-6 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC653 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| FDC653N | 功能描述:MOSFET SSOT-6 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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