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參數資料
| 型號： | FDC6506 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual P-Channel Logic Level PowerTrench⑩ MOSFET |
| 中文描述： | 雙P溝道邏輯電平的PowerTrench MOSFET的⑩ |
| 文件頁數： | 5/8頁 |
| 文件大小： | 204K |
| 代理商： | FDC6506 |
1998 Fairchild Semiconductor Corporation
SSOT-6 Unit Orientation
Conductive Embossed
Carrier Tape
F63TNR
Label
Customize Label
Antistatic Cover Tape
SSOT-6 Packaging
Configuration:
Figure 1.0
Components
Leader Tape
390mm minimum
Trailer Tape
160mm minimum
SSOT-6 Tape Leader
Configuration:
Figure 2.0
Trailer
Cover Tape
Carrier
Pin 1
Tape
Note/Comments
Packaging Option
SSOT-6 Packaging Information
Standard
(no flow code)
TNR
D87Z
Packaging type
Reel Size
7” Dia
TNR
13”
Qty per Reel/Tube/Bag
3,000
10,000
Box Dimension (mm)
184x187x47
343x343x64
Max qty per Box
9,000
20,000
Weight per unit (gm)
0.0158
0.0158
Weight per Reel (kg)
0.1440
0.4700
184mm x 184mm x 47mm
Pizza Box for Standard Option
F63TNR
Label
F63TNR Label
F63TNR Label sample
343mm x 342mm x 64mm
Intermediate box for D87Z Option
631
631
631
631
LOT: CBVK741B019
FSID: FDC633N
D/C1: D9842
QTY1:
SPEC REV: QARV:
SPEC:
QTY: 3000
(F63TNR)2
F63TNR
Label
SuperSOT
TM
-6 Tape and Reel Data and Package Dimensions
December 1998, Rev. B
相關PDF資料 |
PDF描述 |
|---|---|
| FDC6506P | Dual P-Channel Logic Level PowerTrench⑩ MOSFET |
| FDC653 | N-Channel Enhancement Mode Field Effect Transistor |
| FDC653N | N-Channel Enhancement Mode Field Effect Transistor |
| FDC654P | P-Channel Enhancement Mode Field Effect Transistor |
| FDC655BN | Single N-Channel, Logic Level, PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDC6506P | 功能描述:MOSFET SSOT-6 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6506P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-6 |
| FDC6506P_Q | 功能描述:MOSFET SSOT-6 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC653 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| FDC653N | 功能描述:MOSFET SSOT-6 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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