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參數資料
| 型號： | FDC654P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 3600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, SUPERSOT-6 |
| 文件頁數： | 3/4頁 |
| 文件大小： | 74K |
| 代理商： | FDC654P |
FDC654P Rev.C
0
1
2
3
4
5
0
3
6
9
12
15
-V , DRAIN-SOURCE VOLTAGE (V)
-
D
V = -10V
-6.0
-5.0
-3.0
-4.0
-3.5
-4.5
0
3
6
9
12
15
0.5
1
1.5
2
-I , DRAIN CURRENT (A)
D
V = -3.5 V
R
D
-10
-4.5
-4.0
-6.0
-5.0
-5.5
-7.0
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation
with Temperature.
Figure 5. Transfer Characteristics.
0
0.2
-V , BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
1.4
0.0001
0.001
0.01
0.1
1
15
-
S
TJ
25°C
-55°C
V = 0V
Figure 4. On-Resistance
Variation with
Gate-to-Source Voltage.
2
4
6
8
10
0.05
0.1
0.15
0.2
0.25
0.3
-V , GATE TO SOURCE VOLTAGE (V)
R
D
I = -1.8A
T = 125°C
A
25°C
0
0.5
1
1.5
2
2.5
3
0
3
6
9
12
15
-V , GATE TO SOURCE VOLTAGE (V)
-
D
V = -5.0V
J
125°C
25°C
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
R
D
V = -10V
I = -3.6A
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDC654P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDC654P_G | 制造商:FAIRCHILD 功能描述:MOSFET, -30V/3.6A, SSOT6 (Halogen Free) |
| FDC654P-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDC654P Series 30 V 75 mOhm Single P-Ch Logic Level PowerTrench Mosfet SSOT-6 |
| FDC655AN | 功能描述:MOSFET SSOT-6 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC655AN | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SUPERSOT-6 |
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