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參數資料
型號: FDC654P
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: P-Channel Enhancement Mode Field Effect Transistor
中文描述: 3600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: LEAD FREE, SUPERSOT-6
文件頁數: 4/4頁
文件大小: 74K
代理商: FDC654P
FDC654P Rev.C
Figure 10. Single Pulse Maximum Power
Dissipation.
0.1
0.2
0.5
1
2
5
10
30
30
80
200
600
1500
-V , DRAIN TO SOURCE VOLTAGE (V)
C
C s
f = 1 MHz
V = 0 V
C ss
C s
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical And Thermal Characteristics
0
2
4
6
8
10
12
0
2
4
6
8
10
Q , GATE CHARGE (nC)
-
G
V = -5V
-10V
-15V
I = -3.6A
0.1
0.2
0.5
- V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
30
50
0.01
0.03
0.1
0.3
1
3
10
30
-
RDS(ON)LMT
D
A
DC
1s
100ms
10ms
1ms
V = -10V
SINGLE PULSE
R = See Note 1b
T = 25°C
A
JA
100us
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.01
0.02
0.05
0.1
0.2
0.5
1
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
r
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = See Note 1b
T - T = P * R JA
P(pk)
t
1
t
2
Figure 11. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1b.
Transient thermal response will change depending on the circuit board design.
0.01
0.1
1
10
100
300
0
1
2
3
4
5
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R =See note 1b
T = 25°C
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相關代理商/技術參數
參數描述
FDC654P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDC654P_G 制造商:FAIRCHILD 功能描述:MOSFET, -30V/3.6A, SSOT6 (Halogen Free)
FDC654P-CUT TAPE 制造商:FAIRCHILD 功能描述:FDC654P Series 30 V 75 mOhm Single P-Ch Logic Level PowerTrench Mosfet SSOT-6
FDC655AN 功能描述:MOSFET SSOT-6 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC655AN 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SUPERSOT-6
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