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參數(shù)資料
| 型號： | FDC6561 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual N-Channel Logic Level PowerTrenchTM MOSFET |
| 中文描述： | 雙N溝道MOSFET的邏輯電平PowerTrenchTM |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 256K |
| 代理商： | FDC6561 |
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA, Referenced to 25
o
C
30
V
Breakdown Voltage Temp. Coefficient
23.6
mV/
o
C
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
1
μA
T
J
= 55
o
C
10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
V
GS(th)
/
T
J
R
DS(ON)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
I
D
= 250 μA, Referenced to 25
o
C
1
1.8
3
V
Gate Threshold VoltageTemp.Coefficient
-4
mV/
o
C
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 2.5 A
0.082
0.095
T
J
= 125
o
C
0.122
0.152
V
GS
= 4.5 V, I
D
= 2.0 A
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 2.5 A
0.113
0.145
I
D(on)
g
FS
DYNAMIC CHARACTERISTICS
On-State Drain Current
10
A
Forward Transconductance
5
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
220
pF
Output Capacitance
50
pF
Reverse Transfer Capacitance
25
pF
t
D(on)
t
r
Turn - On Delay Time
V
DD
= 5 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
6
12
ns
Turn - On Rise Time
10
18
ns
t
D(off)
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS
Turn - Off Delay Time
12
22
ns
Turn - Off Fall Time
2
6
ns
Total Gate Charge
V
DS
= 15 V, I
D
= 2.5 A
V
GS
= 5 V
2.3
3.2
nC
Gate-Source Charge
0.7
1
nC
Gate-Drain Charge
0.9
1.3
nC
I
S
V
SD
Continuous Source Diode Current
0.75
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 0.75 A
(Note 2)
0.78
1.2
V
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed
by design while R
θ
CA
is determined by the user's board design.
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDC6561AN Rev.C
c. 180
O
C/W on a minimum pad.
b. 140
O
C/W on a 0.005 in
2
pad of
2oz copper.
a. 130
O
C/W on a 0.125 in
2
pad of
2oz copper.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDC6561AN | 功能描述:MOSFET SSOT-6 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6561AN | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET Transistor Transistor Polarity:Du |
| FDC6561AN | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SUPERSOT-6 |
| FDC6561AN_Q | 功能描述:MOSFET N-Channel 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6561AN-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDC6561AN Series 30 V 0.095 Ohm Dual N-Ch Logic Level PowerTrench Mosfet SSOT-6 |
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