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參數資料
| 型號： | FDC697P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel 1.8V PowerTrench MOSFET |
| 中文描述： | 8 A, 20 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, FLMP, SUPERSOT-6 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 159K |
| 代理商： | FDC697P |
January 2004
2004 Fairchild Semiconductor Corporation
FDC697P Rev C2 (W)
FDC697P
P-Channel 1.8V PowerTrench
MOSFET
General Description
This P-Channel 1.8V specified MOSFET
Fairchild’s advanced low voltage Power Trench
process. It has been optimized for battery power
management applications.
uses
Applications
Battery management
Load Switch
Battery protection
Features
–8 A, –20 V
R
DS(ON)
= 20 m
@ V
GS
= –4.5 V
R
DS(ON)
= 25 m
@ V
GS
= –2.5 V
R
DS(ON)
= 35 m
@ V
GS
= –1.8 V
High performance trench technology for extremely
low R
DS(ON)
Fast switching speed
FLMP SuperSOT-6 package: Enhanced thermal
performance in industry-standard package size
SuperSOT-6
TM
FLMP
S
S
S
G
S
S
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
Ratings
–20
±
8
–8
–40
2
1.5
–55 to +150
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Power Dissipation
(Note 1a)
– Pulsed
P
D
(Note 1a)
(Note 1b)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
60
111
0.5
°
C/W
(Note 1b)
R
θ
JC
Package Marking and Ordering Information
Device Marking
Device
.697
FDC697P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
3
2
1
4
5
6
Bottom
Drain
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| FDC697P_F077 | 功能描述:MOSFET PCh 1.8V PwrTrnch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC699P | 功能描述:MOSFET P-Channel 2.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC699P_F077 | 功能描述:MOSFET P-Channel 2.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC699PDKR-ND | 制造商:Freescale Semiconductor 功能描述: |
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