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參數(shù)資料
| 型號： | FDC6561AN |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual N-Channel Logic Level PowerTrenchTM MOSFET |
| 中文描述： | 2500 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 256K |
| 代理商： | FDC6561AN |
FDC6561AN Rev.C
Figure 10. Single Pulse Maximum Power
Dissipation.
0.1
0.5
1
2
5
10
30
10
20
50
100
200
500
V , DRAIN TO SOURCE VOLTAGE (V)
C
C ss
f = 1 MHz
V = 0V
C ss
C ss
Figure 8. Capacitance Characteristics
.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical Characteristics
(continued)
0
1
2
3
4
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V
G
I = 2.5A
10V
15V
V = 5V
0.1
0.3
1
3
10
30
50
0.01
0.03
0.1
0.3
1
3
10
30
V , DRAIN-SOURCE VOLTAGE (V)
I
D
RDS(ON)LMT
V = 10V
SINGLE PULSE
R =180°C/W
T = 25°C
DC
1s
10ms
100ms
1ms
100us
0.01
0.1
1
10
100
300
0
1
2
3
4
5
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R =180°C/W
T = 25°C
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.01
0.02
0.05
0.1
0.2
0.5
1
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
r
Duty Cycle, D = t / t
2
T - T = P * R JA
P(pk)
t
1
t
2
R (t) = r(t) * R
R =
180
°C/W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC6561AN | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET Transistor Transistor Polarity:Du |
| FDC6561AN | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SUPERSOT-6 |
| FDC6561AN_Q | 功能描述:MOSFET N-Channel 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6561AN-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDC6561AN Series 30 V 0.095 Ohm Dual N-Ch Logic Level PowerTrench Mosfet SSOT-6 |
| FDC658AP | 功能描述:MOSFET -30VSgl P-Chl LogLv PwrTrch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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