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參數(shù)資料
型號: FDD107AN06LA0
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench MOSFET 60V, 10A, 107m
中文描述: 3.4 A, 60 V, 0.091 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝: TO-252AA, 3 PIN
文件頁數(shù): 4/11頁
文件大小: 225K
代理商: FDD107AN06LA0
2004 Fairchild Semiconductor Corporation
FDD107AN06LA0 Rev. A1
F
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
T
C
= 25°C unless otherwise noted
0.1
1
10
100
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
J
= MAX RATED
T
C
= 25
C
SINGLE PULSE
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
10
μ
s
1ms
DC
100
μ
s
10ms
1
10
0.001
0.01
t
AV
, TIME IN AVALANCHE (ms)
0.1
1
10
50
I
A
,
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
0
5
10
15
20
2
3
4
5
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
5
10
15
20
0
0.5
1.0
1.5
2.0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 3V
T
C
= 25
o
C
V
GS
= 10V
V
GS
= 4V
V
GS
= 5V
50
100
150
200
2
4
6
8
10
I
D
= 1A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 10.9A
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
0.5
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
=10.9A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
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