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參數資料
| 型號： | FDD2570 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 150V N-Channel PowerTrench MOSFET |
| 中文描述： | 4.7 A, 150 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 99K |
| 代理商： | FDD2570 |
February 2001
2001 Fairchild Semiconductor Corporation
FDD2570 Rev C(W)
FDD2570
150V N-Channel PowerTrench
MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
N-Channel
MOSFET
has
been
designed
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
4.7 A, 150 V.
R
DS(ON)
= 80 m
@ V
GS
= 10 V
R
DS(ON)
= 90 m
@ V
GS
= 6 V
Low gate charge
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability.
G
S
D
TO-252
S
D
G
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
Drain Current
– Pulsed
Maximum Power Dissipation @ T
C
= 25
°
C
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
150
±
20
4.7
30
70
3.2
1.3
-55 to +150
Units
V
V
A
(Note 1a)
(Note 1)
@ T
A
= 25
°
C
@ T
A
= 25
°
C
(Note 1a)
P
D
(Note 1b)
W
°
C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
1.8
96
°
C/W
°
C/W
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
FDD2570
FDD2570
Reel Size
13’’
Tape width
16mm
Quantity
2500 units
F
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD2572 | 功能描述:MOSFET N-Ch Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD2572 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDD2572_F085 | 功能描述:MOSFET N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD2572_F085_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 150V, 29A, 54m?? |
| FDD2582 | 功能描述:MOSFET N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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